Application of cyclic fluorocarbon/argon discharges to device patterning
- Univ. of Maryland, College Park, MD (United States); IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
- IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
- Univ. of Maryland, College Park, MD (United States)
With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this study, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with this work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.
- Research Organization:
- Univ. of Maryland, College Park, MD (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0001939
- OSTI ID:
- 1224881
- Journal Information:
- Journal of Vacuum Science and Technology A, Vol. 34, Issue 1; ISSN 0734-2101
- Publisher:
- American Vacuum SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
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journal | September 2016 |
Cryo atomic layer etching of SiO 2 by C 4 F 8 physisorption followed by Ar plasma
|
journal | October 2019 |
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