High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, G.; Gul, R.; James, R. B.

doi:10.1063/1.4907250

Title: High Compositional Homogeneity of CdTe_xSe_1-x Crystals Grown by the Bridgman Method

Journal Article · Tue Feb 03 00:00:00 EST 2015 · APL Materials

DOI:https://doi.org/10.1063/1.4907250· OSTI ID:1224177

Roy, U. N. ^[1]; Bolotnikov, A. E. ^[1]; Camarda, G. S. ^[1]; Cui, Y. ^[1]; Hossain, A. ^[1]; Lee, K. ^[2]; Lee, W. ^[2]; Tappero, R. ^[1]; Yang, G. ^[1]; Gul, R. ^[1]; James, R. B. ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Korea Univ., Seoul (South Korea)

We obtained high-quality CdTe_xSe_1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd_xZn_1-xTe (CdZnTe or CZT).

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)

Grant/Contract Number:: SC00112704

OSTI ID:: 1224177

Report Number(s):: BNL-108067-2015-JA; NN2001

Journal Information:: APL Materials, Vol. 3, Issue 2; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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References (16)

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors Bolotnikov, A. E.; Camarda, G. S.; Cui, Y. Journal of Crystal Growth, Vol. 379 https://doi.org/10.1016/j.jcrysgro.2013.01.048	journal	September 2013
Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors Peng, Changtao; Chen, NuoFu; Gao, Fubao Applied Physics Letters, Vol. 88, Issue 24 https://doi.org/10.1063/1.2209709	journal	June 2006
Fundamental studies on Bridgman growth of CdTe Rudolph, P. Progress in Crystal Growth and Characterization of Materials, Vol. 29, Issue 1-4 https://doi.org/10.1016/0960-8974(94)90009-4	journal	January 1994
Recent Progress In Lattice Matched Substrates For HgCdTe EPITAXY Johnson, Carl J. SPIE 1989 Technical Symposium on Aerospace Sensing, SPIE Proceedings https://doi.org/10.1117/12.960629	conference	September 1989
Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects Bolotnikov, Aleksey E.; Babalola, Stephen; Camarda, Giuseppe S. IEEE Transactions on Nuclear Science, Vol. 57, Issue 2 https://doi.org/10.1109/TNS.2010.2042617	journal	April 2010
Cadmium zinc telluride and its use as a nuclear radiation detector material Schlesinger, T. E.; Toney, J. E.; Yoon, H. Materials Science and Engineering: R: Reports, Vol. 32, Issue 4-5 https://doi.org/10.1016/s0927-796x(01)00027-4	journal	April 2001
Performance-Limiting Defects in CdZnTe Detectors Bolotnikov, A. E.; Camarda, G. S.; Carini, G. A. IEEE Transactions on Nuclear Science, Vol. 54, Issue 4 https://doi.org/10.1109/TNS.2007.894555	journal	August 2007
Performance-limiting Defects in CdZnTe Detectors Bolotnikov, A. E.; Camarda, G. S.; Carini, G. 2006 IEEE Nuclear Science Symposium Conference Record https://doi.org/10.1109/nssmic.2006.353780	conference	October 2006
Dislocations in HgCdTe/CdTe and HgCdTe/CdZnTe heterojunctions Yoshikawa, M.; Maruyama, K.; Saito, T. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 5, Issue 5 https://doi.org/10.1116/1.574214	journal	September 1987
High-quality large-area MBE HgCdTe/Si Peterson, J. M.; Franklin, J. A.; Reddy, M. Journal of Electronic Materials, Vol. 35, Issue 6 https://doi.org/10.1007/s11664-006-0255-1	journal	June 2006
Recent progress in infrared detector technologies Rogalski, A. Infrared Physics & Technology, Vol. 54, Issue 3 https://doi.org/10.1016/j.infrared.2010.12.003	journal	May 2011
Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride Zhang, Nan; Yeckel, Andrew; Burger, Arnold Journal of Crystal Growth, Vol. 325, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.04.041	journal	June 2011
Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors Yang, G.; Bolotnikov, A. E.; Fochuk, P. M. Journal of Crystal Growth, Vol. 379 https://doi.org/10.1016/j.jcrysgro.2012.11.041	journal	September 2013
Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation Kim, KiHyun; Hong, JinKi; Kim, SunUng Journal of Crystal Growth, Vol. 310, Issue 1 https://doi.org/10.1016/j.jcrysgro.2007.10.009	journal	January 2008
Zinc segregation in HPB grown nuclear detector grade Cd1−xZnxTe Fougères, P.; Chibani, L.; Hageali, M. Journal of Crystal Growth, Vol. 197, Issue 3 https://doi.org/10.1016/s0022-0248(98)00762-3	journal	February 1999
Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors Fiederle, M.; Ebling, D.; Eiche, C. Journal of Crystal Growth, Vol. 138, Issue 1-4 https://doi.org/10.1016/0022-0248(94)90863-X	journal	April 1994

Cited By (4)

Influence of deep levels on the electrical transport properties of CdZnTeSe detectors Rejhon, M.; Franc, J.; Dědič, V. Journal of Applied Physics, Vol. 124, Issue 23 https://doi.org/10.1063/1.5063850	journal	December 2018
An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers Gul, R.; Roy, U. N.; James, R. B. Journal of Applied Physics, Vol. 121, Issue 11 https://doi.org/10.1063/1.4978377	journal	March 2017
Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-43778-3	journal	May 2019
Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique Roy, U. N.; Okobiah, O. K.; Camarda, G. S. AIP Advances, Vol. 8, Issue 10 https://doi.org/10.1063/1.5040362	journal	October 2018

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