Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles
Patent
·
OSTI ID:1223115
A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
- Research Organization:
- The University of Massachusetts, Boston, MA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-96ER45612
- Assignee:
- The University of Massachusetts (Boston, MA)
- Patent Number(s):
- 9,156,682
- Application Number:
- 13/480,506
- OSTI ID:
- 1223115
- Resource Relation:
- Patent File Date: 2012 May 25
- Country of Publication:
- United States
- Language:
- English
Similar Records
Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles
Method of producing nanopatterned articles, and articles produced thereby
Method of producing nanopatterned articles, and articles produced thereby
Patent
·
Tue Aug 01 00:00:00 EDT 2017
·
OSTI ID:1223115
+2 more
Method of producing nanopatterned articles, and articles produced thereby
Patent
·
Tue Apr 28 00:00:00 EDT 2015
·
OSTI ID:1223115
Method of producing nanopatterned articles, and articles produced thereby
Patent
·
Tue Nov 12 00:00:00 EST 2013
·
OSTI ID:1223115