Calculated transport properties of CdO: thermal conductivity and thermoelectric power factor

Lindsay, Lucas R.; Parker, David S.

doi:10.1103/PhysRevB.92.144301

Title: Calculated transport properties of CdO: thermal conductivity and thermoelectric power factor

Journal Article · Thu Oct 01 00:00:00 EDT 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.92.144301· OSTI ID:1223080

Lindsay, Lucas R. ^[1]; Parker, David S. ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

We present first principles calculations of the thermal and electronic transport properties of the oxide semiconductor CdO. In particular, we find from theory that the accepted thermal conductivity κ value of 0.7 Wm^-1K^-1 is approximately one order of magnitude too small; our calculations of κ of CdO are in good agreement with recent measurements. We also find that alloying of MgO with CdO is an effective means to reduce the lattice contribution to κ, despite MgO having a much larger thermal conductivity. We further consider the electronic structure of CdO in relation to thermoelectric performance, finding that large thermoelectric power factors may occur if the material can be heavily doped p-type. This work develops insight into the nature of thermal and electronic transport in an important oxide semiconductor.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC05-00OR22725; AC02-05CH11231

OSTI ID:: 1223080

Alternate ID(s):: OSTI ID: 1222503

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 92, Issue 14; ISSN 1098-0121

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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