Accessing a growth window for SrVO3 thin films
Abstract
Stoichiometric SrVO3 thin films were grown over a range of cation fluxes on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates using hybrid molecular beam epitaxy, where a thermal effusion cell was employed to generate a Sr flux and V was supplied using the metal-organic precursor vanadium oxytriisopropoxide (VTIP). By systematically varying the VTIP flux while keeping the Sr flux constant, a range of flux ratios were discovered in which the structural and electronic properties of the SrVO3 films remained unaltered. The intrinsic film lattice parameter and residual resistivity were found to be the smallest inside the growth window, indicating the lowest defect concentration of the films, and rapidly increased for cation flux ratios deviating from ideal growth condition. Reflection high-energy electron diffraction showed that films grown within this range had smooth surfaces and diffraction patterns were free of additional spots, while otherwise the growing surface was rough and contained additional crystalline phases. Here, results show the existence of a SrVO3 growth window at sufficiently high growth temperature, in which high-quality, stoichiometric films can be grown in a robust, highly reproducible manner that is invulnerable to unintentional flux variation.
- Authors:
-
- Pennsylvania State Univ., University Park, PA (United States)
- Publication Date:
- Research Org.:
- Pennsylvania State Univ., University Park, PA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1469382
- Alternate Identifier(s):
- OSTI ID: 1223041
- Grant/Contract Number:
- SC0012375
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 14; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, and Engel-Herbert, Roman. Accessing a growth window for SrVO3 thin films. United States: N. p., 2015.
Web. doi:10.1063/1.4932198.
Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, & Engel-Herbert, Roman. Accessing a growth window for SrVO3 thin films. United States. https://doi.org/10.1063/1.4932198
Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, and Engel-Herbert, Roman. 2015.
"Accessing a growth window for SrVO3 thin films". United States. https://doi.org/10.1063/1.4932198. https://www.osti.gov/servlets/purl/1469382.
@article{osti_1469382,
title = {Accessing a growth window for SrVO3 thin films},
author = {Brahlek, Matthew and Zhang, Lei and Eaton, Craig and Zhang, Hai -Tian and Engel-Herbert, Roman},
abstractNote = {Stoichiometric SrVO3 thin films were grown over a range of cation fluxes on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates using hybrid molecular beam epitaxy, where a thermal effusion cell was employed to generate a Sr flux and V was supplied using the metal-organic precursor vanadium oxytriisopropoxide (VTIP). By systematically varying the VTIP flux while keeping the Sr flux constant, a range of flux ratios were discovered in which the structural and electronic properties of the SrVO3 films remained unaltered. The intrinsic film lattice parameter and residual resistivity were found to be the smallest inside the growth window, indicating the lowest defect concentration of the films, and rapidly increased for cation flux ratios deviating from ideal growth condition. Reflection high-energy electron diffraction showed that films grown within this range had smooth surfaces and diffraction patterns were free of additional spots, while otherwise the growing surface was rough and contained additional crystalline phases. Here, results show the existence of a SrVO3 growth window at sufficiently high growth temperature, in which high-quality, stoichiometric films can be grown in a robust, highly reproducible manner that is invulnerable to unintentional flux variation.},
doi = {10.1063/1.4932198},
url = {https://www.osti.gov/biblio/1469382},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 107,
place = {United States},
year = {Mon Oct 05 00:00:00 EDT 2015},
month = {Mon Oct 05 00:00:00 EDT 2015}
}
Web of Science
Works referenced in this record:
Surface reconstructions in molecular beam epitaxy of SrTiO 3
journal, November 2014
- Kajdos, Adam P.; Stemmer, Susanne
- Applied Physics Letters, Vol. 105, Issue 19
Growth of SrTiO 3 on Si(001) by hybrid molecular beam epitaxy : Growth of SrTiO
journal, September 2014
- Zhang, Lei; Engel-Herbert, Roman
- physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 11
Two-Dimensional Mott Insulators in SrVO 3 Ultrathin Films
journal, June 2014
- Gu, Man; Wolf, Stuart A.; Lu, Jiwei
- Advanced Materials Interfaces, Vol. 1, Issue 7
Growth of SrVO 3 thin films by hybrid molecular beam epitaxy
journal, November 2015
- Eaton, Craig; Moyer, Jarrett A.; Alipour, Hamideh M.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 6
Adsorption-controlled growth of PbTiO3 by reactive molecular beam epitaxy
journal, July 1998
- Theis, C. D.; Yeh, J.; Schlom, D. G.
- Thin Solid Films, Vol. 325, Issue 1-2
Molecular beam epitaxy of SrTiO3 with a growth window
journal, July 2009
- Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne
- Applied Physics Letters, Vol. 95, Issue 3
Fabrication and anomalous conducting behavior of atomically regulated superlattices
journal, October 1991
- Koinuma, H.; Yoshimoto, M.; Nagata, H.
- Solid State Communications, Vol. 80, Issue 1
Pulsed Laser Deposition of Epitaxial SrVO 3 Films on (100)LaAlO 3 and (100)Si
journal, January 2000
- Yip, P. W.; Wong, K. H.
- MRS Proceedings, Vol. 623
High-Temperature Superconducting Multilayers and Heterostructures Grown by Atomic Layer-By-Layer Molecular Beam Epitaxy
journal, August 1995
- Eckstein, J. N.; Bozovic, I.
- Annual Review of Materials Science, Vol. 25, Issue 1
Atomically precise interfaces from non-stoichiometric deposition
journal, August 2014
- Nie, Y. F.; Zhu, Y.; Lee, C. -H.
- Nature Communications, Vol. 5, Issue 1
Effect of charge modulation in (LaVO3)m(SrVO3)n superlattices on the insulator-metal transition
journal, November 2007
- Sheets, W. C.; Mercey, B.; Prellier, W.
- Applied Physics Letters, Vol. 91, Issue 19
Mott-Hubbard Transition versus Anderson Localization in Correlated Electron Systems with Disorder
journal, February 2005
- Byczuk, Krzysztof; Hofstetter, Walter; Vollhardt, Dieter
- Physical Review Letters, Vol. 94, Issue 5
Correlated-Electron Physics in Transition-Metal Oxides
journal, July 2003
- Tokura, Yoshinori
- Physics Today, Vol. 56, Issue 7
Stoichiometry-driven metal-to-insulator transition in NdTiO 3 /SrTiO 3 heterostructures
journal, February 2014
- Xu, Peng; Phelan, Daniel; Seok Jeong, Jong
- Applied Physics Letters, Vol. 104, Issue 8
Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy
journal, June 2015
- Zhang, Hai-Tian; Dedon, Liv R.; Martin, Lane W.
- Applied Physics Letters, Vol. 106, Issue 23
Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction
journal, October 2009
- LeBeau, James M.; Engel-Herbert, Roman; Jalan, Bharat
- Applied Physics Letters, Vol. 95, Issue 14
Control of MBE, MOMBE and CBE growth using RHEED
journal, June 1991
- Foxon, C. T.
- Applied Surface Science, Vol. 50, Issue 1-4
Optical properties of correlated materials - Or why intelligent windows may look dirty
journal, September 2009
- Tomczak, Jan M.; Biermann, Silke
- physica status solidi (b), Vol. 246, Issue 9
Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V-1 s-1
journal, April 2010
- Son, Junwoo; Moetakef, Pouya; Jalan, Bharat
- Nature Materials, Vol. 9, Issue 6, p. 482-484
Disordered electronic systems
journal, April 1985
- Lee, Patrick A.; Ramakrishnan, T. V.
- Reviews of Modern Physics, Vol. 57, Issue 2
Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy
journal, August 2014
- Lee, J. H.; Luo, G.; Tung, I. C.
- Nature Materials, Vol. 13, Issue 9
Evolution of the spectral function in Mott-Hubbard systems with configuration
journal, September 1992
- Fujimori, A.; Hase, I.; Namatame, H.
- Physical Review Letters, Vol. 69, Issue 12
Growth modes in metal-organic molecular beam epitaxy of TiO2 on r-plane sapphire
journal, March 2009
- Jalan, Bharat; Engel-Herbert, Roman; Cagnon, Joël
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 2
Strongly Correlated Materials
journal, August 2012
- Morosan, Emilia; Natelson, Douglas; Nevidomskyy, Andriy H.
- Advanced Materials, Vol. 24, Issue 36
Doping a Mott insulator: Physics of high-temperature superconductivity
journal, January 2006
- Lee, Patrick A.; Nagaosa, Naoto; Wen, Xiao-Gang
- Reviews of Modern Physics, Vol. 78, Issue 1
Epitaxially deposited SrVO/sub 3/ conducting films by laser ablation and metal organic chemical vapor deposition
conference, January 1996
- Ritums, D. L.; Wu, N. J.; Liu, D.
- ISAF '96. Tenth IEEE International Symposium on Applications of Ferroelectrics, ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics
Defects and transport in complex oxide thin films
journal, May 2008
- Ohnishi, Tsuyoshi; Shibuya, Keisuke; Yamamoto, Takahisa
- Journal of Applied Physics, Vol. 103, Issue 10
The role of MBE in recent quantum Hall effect physics discoveries
journal, December 2003
- Pfeiffer, Loren; West, K. W.
- Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, Issue 1-2
From chemical vapor epitaxy to chemical beam epitaxy
journal, February 1989
- Tsang, W. T.
- Journal of Crystal Growth, Vol. 95, Issue 1-4
MBE deserves a place in the history books
journal, May 2007
- McCray, W. Patrick
- Nature Nanotechnology, Vol. 2, Issue 5
Adsorption-controlled molecular-beam epitaxial growth of BiFeO3
journal, August 2007
- Ihlefeld, J. F.; Kumar, A.; Gopalan, V.
- Applied Physics Letters, Vol. 91, Issue 7
Highly Conductive SrVO 3 as a Bottom Electrode for Functional Perovskite Oxides
journal, May 2013
- Moyer, Jarrett A.; Eaton, Craig; Engel-Herbert, Roman
- Advanced Materials, Vol. 25, Issue 26
Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy
journal, June 2010
- Lee, J. H.; Ke, X.; Misra, R.
- Applied Physics Letters, Vol. 96, Issue 26
Chemical beam epitaxy — a child of surface science
journal, January 1994
- Lüth, Hans
- Surface Science, Vol. 299-300
Laser molecular beam epitaxy of single-crystal SrVO3−x films
journal, February 1992
- Nagata, Hirotoshi; Tsukahara, Tadashi; Yoshimoto, Mamoru
- Thin Solid Films, Vol. 208, Issue 2
Materials Fundamentals of Molecular Beam Epitaxy
journal, October 1993
- Tsao, Jeffrey Y.; Harbison, James P.
- Physics Today, Vol. 46, Issue 10
Metal-insulator transitions
journal, June 1991
- Paesler, Michael
- Journal of Non-Crystalline Solids, Vol. 130, Issue 1
Disordered Electronic Systems
journal, December 1988
- Al'tshuler, Boris L.; Lee, Patrick A.
- Physics Today, Vol. 41, Issue 12
Effect of charge modulation in (LaVO3)m(SrVO3)n superlattices on the insulator-metal transition
text, January 2007
- Sheets, W. C.; Mercey, B.; Prellier, W.
- arXiv
Surface Reconstructions in Molecular Beam Epitaxy of SrTiO3
text, January 2014
- Kajdos, Adam P.; Stemmer, Susanne
- arXiv
Works referencing / citing this record:
High Carrier Mobility, Electrical Conductivity, and Optical Transmittance in Epitaxial SrVO 3 Thin Films
journal, February 2019
- Mirjolet, Mathieu; Sánchez, Florencio; Fontcuberta, Josep
- Advanced Functional Materials, Vol. 29, Issue 14
Independent Tuning of Optical Transparency Window and Electrical Properties of Epitaxial SrVO 3 Thin Films by Substrate Mismatch
journal, July 2019
- Mirjolet, Mathieu; Vasili, Hari Babu; López‐Conesa, LLuís
- Advanced Functional Materials, Vol. 29, Issue 37
Scalable Synthesis of the Transparent Conductive Oxide SrVO 3
journal, October 2019
- Shoham, Lishai; Baskin, Maria; Han, Myung‐Geun
- Advanced Electronic Materials, Vol. 6, Issue 1
Surface Characterizations and Selective Etching of Sr‐Rich Segregation on Top of SrVO 3 Thin‐Films Grown by Pulsed Laser Deposition
journal, March 2019
- Bourlier, Yoan; Frégnaux, Mathieu; Bérini, Bruno
- ChemNanoMat, Vol. 5, Issue 5
Correlated metals as transparent conductors
journal, December 2015
- Zhang, Lei; Zhou, Yuanjun; Guo, Lu
- Nature Materials, Vol. 15, Issue 2
Scaling growth rates for perovskite oxide virtual substrates on silicon
journal, June 2019
- Lapano, Jason; Brahlek, Matthew; Zhang, Lei
- Nature Communications, Vol. 10, Issue 1
Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO 3 films
journal, January 2017
- Prakash, Abhinav; Xu, Peng; Wu, Xuewang
- Journal of Materials Chemistry C, Vol. 5, Issue 23
Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy
journal, September 2016
- Brahlek, Matthew; Zhang, Lei; Zhang, Hai-Tian
- Applied Physics Letters, Vol. 109, Issue 10
Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies
journal, March 2018
- Andersen, Tassie K.; Cook, Seyoung; Benda, Erika
- Review of Scientific Instruments, Vol. 89, Issue 3
Synthesis science of SrRuO 3 and CaRuO 3 epitaxial films with high residual resistivity ratios
journal, April 2018
- Nair, Hari P.; Liu, Yang; Ruf, Jacob P.
- APL Materials, Vol. 6, Issue 4
Opportunities in vanadium-based strongly correlated electron systems
journal, February 2017
- Brahlek, Matthew; Zhang, Lei; Lapano, Jason
- MRS Communications, Vol. 7, Issue 1
Scaling growth rates for perovskite oxide virtual substrates on silicon
journal, June 2019
- Lapano, Jason; Brahlek, Matthew; Zhang, Lei
- Nature Communications, Vol. 10, Issue 1