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Title: Accessing a growth window for SrVO3 thin films

Abstract

Stoichiometric SrVO3 thin films were grown over a range of cation fluxes on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates using hybrid molecular beam epitaxy, where a thermal effusion cell was employed to generate a Sr flux and V was supplied using the metal-organic precursor vanadium oxytriisopropoxide (VTIP). By systematically varying the VTIP flux while keeping the Sr flux constant, a range of flux ratios were discovered in which the structural and electronic properties of the SrVO3 films remained unaltered. The intrinsic film lattice parameter and residual resistivity were found to be the smallest inside the growth window, indicating the lowest defect concentration of the films, and rapidly increased for cation flux ratios deviating from ideal growth condition. Reflection high-energy electron diffraction showed that films grown within this range had smooth surfaces and diffraction patterns were free of additional spots, while otherwise the growing surface was rough and contained additional crystalline phases. Here, results show the existence of a SrVO3 growth window at sufficiently high growth temperature, in which high-quality, stoichiometric films can be grown in a robust, highly reproducible manner that is invulnerable to unintentional flux variation.

Authors:
 [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1]
  1. Pennsylvania State Univ., University Park, PA (United States)
Publication Date:
Research Org.:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1469382
Alternate Identifier(s):
OSTI ID: 1223041
Grant/Contract Number:  
SC0012375
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, and Engel-Herbert, Roman. Accessing a growth window for SrVO3 thin films. United States: N. p., 2015. Web. doi:10.1063/1.4932198.
Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, & Engel-Herbert, Roman. Accessing a growth window for SrVO3 thin films. United States. https://doi.org/10.1063/1.4932198
Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, and Engel-Herbert, Roman. 2015. "Accessing a growth window for SrVO3 thin films". United States. https://doi.org/10.1063/1.4932198. https://www.osti.gov/servlets/purl/1469382.
@article{osti_1469382,
title = {Accessing a growth window for SrVO3 thin films},
author = {Brahlek, Matthew and Zhang, Lei and Eaton, Craig and Zhang, Hai -Tian and Engel-Herbert, Roman},
abstractNote = {Stoichiometric SrVO3 thin films were grown over a range of cation fluxes on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates using hybrid molecular beam epitaxy, where a thermal effusion cell was employed to generate a Sr flux and V was supplied using the metal-organic precursor vanadium oxytriisopropoxide (VTIP). By systematically varying the VTIP flux while keeping the Sr flux constant, a range of flux ratios were discovered in which the structural and electronic properties of the SrVO3 films remained unaltered. The intrinsic film lattice parameter and residual resistivity were found to be the smallest inside the growth window, indicating the lowest defect concentration of the films, and rapidly increased for cation flux ratios deviating from ideal growth condition. Reflection high-energy electron diffraction showed that films grown within this range had smooth surfaces and diffraction patterns were free of additional spots, while otherwise the growing surface was rough and contained additional crystalline phases. Here, results show the existence of a SrVO3 growth window at sufficiently high growth temperature, in which high-quality, stoichiometric films can be grown in a robust, highly reproducible manner that is invulnerable to unintentional flux variation.},
doi = {10.1063/1.4932198},
url = {https://www.osti.gov/biblio/1469382}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 107,
place = {United States},
year = {Mon Oct 05 00:00:00 EDT 2015},
month = {Mon Oct 05 00:00:00 EDT 2015}
}

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Works referenced in this record:

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Works referencing / citing this record:

High Carrier Mobility, Electrical Conductivity, and Optical Transmittance in Epitaxial SrVO 3 Thin Films
journal, February 2019


Independent Tuning of Optical Transparency Window and Electrical Properties of Epitaxial SrVO 3 Thin Films by Substrate Mismatch
journal, July 2019


Scalable Synthesis of the Transparent Conductive Oxide SrVO 3
journal, October 2019


Correlated metals as transparent conductors
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Scaling growth rates for perovskite oxide virtual substrates on silicon
journal, June 2019


Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO 3 films
journal, January 2017


Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy
journal, September 2016


Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies
journal, March 2018


Synthesis science of SrRuO 3 and CaRuO 3 epitaxial films with high residual resistivity ratios
journal, April 2018


Opportunities in vanadium-based strongly correlated electron systems
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Scaling growth rates for perovskite oxide virtual substrates on silicon
journal, June 2019