Technique for etching monolayer and multilayer materials
Abstract
A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.
- Inventors:
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1222600
- Patent Number(s):
- 9,153,453
- Application Number:
- 13/371,124
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY)
- DOE Contract Number:
- AC02-98CH10886
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Feb 10
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE
Citation Formats
Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, and Macrander, Albert. Technique for etching monolayer and multilayer materials. United States: N. p., 2015.
Web.
Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, & Macrander, Albert. Technique for etching monolayer and multilayer materials. United States.
Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, and Macrander, Albert. 2015.
"Technique for etching monolayer and multilayer materials". United States. https://www.osti.gov/servlets/purl/1222600.
@article{osti_1222600,
title = {Technique for etching monolayer and multilayer materials},
author = {Bouet, Nathalie C. D. and Conley, Raymond P. and Divan, Ralu and Macrander, Albert},
abstractNote = {A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.},
doi = {},
url = {https://www.osti.gov/biblio/1222600},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 06 00:00:00 EDT 2015},
month = {Tue Oct 06 00:00:00 EDT 2015}
}
Works referenced in this record:
Method of making sensitive positive electron beam resists
patent, November 1983
- Lai, Juey H.; Douglas, Richard; Shepherd, Lloyd
- US Patent Document 4,415,653
Process for producing semiconductor integrated circuit device having copper interconnections and/or wirings, and device produced
patent, June 1990
- Tokunaga, Takafumi; Tsuneoka, Masatoshi; Mizukami, Koichiro
- US Patent Document 4,931,410
Process for isotropically etching semiconductor devices
patent, October 1994
- Cathey, David A.
- US Patent Document 5,358,601
Interconnection structure of a semiconductor device
patent, August 1995
- Takata, Yoshifumi
- US Patent Document 5,442,238
Endpoint detection for semiconductor processes
patent, June 2000
- Grimbergen, Michael N.; Lill, Thorsten
- US Patent Document 6,081,334
Measurement of electron shading damage
patent, September 2000
- Tabara, Suguru
- US Patent Document 6,114,182
Trench isolation of field effect transistors
patent, August 2001
- Omid-Zohoor, Farrokh; Stolmeijer, Andre; Liu, Yowjuang W.
- US Patent Document 6,274,419
Method of manufacturing EEPROM memory points
patent, March 2002
- Ventajol, Philippe
- US Patent Document 6,362,047
Wiring layer dry etching method and semiconductor device manufacturing method
patent, May 2004
- Kawai, Kenji; Nishiura, Atsunori; Yoshifuku, Ryoichi
- US Patent Document 6,740,598
Trench capacitor with void-free conductor fill
patent, February 2009
- Cheng, Kangguo; Faltermeier, Johnathan E.; Li, Xi
- US Patent Document 7,494,891
Dry etching method and photonic crystal device fabricated by use of the same
patent, July 2009
- Suzuki, Akiko; Sato, Akinobu; Bourelle, Emmanuel
- US Patent Document 7,563,379
Structure with sub-lithographic random conductors as a physical unclonable function
patent-application, February 2014
- Edelstein, Daniel C.; Fritz, Gregory M.; Gates, Stephen M.
- US Patent Application 13/570972; 20140042628
Recent advances in X-ray refractive optics
journal, January 2008
- Aristov, V. V.; Shabel'nikov, L. G.
- Physics-Uspekhi, Vol. 51, Issue 1
WSi 2 /Si multilayer sectioning by reactive ion etching for multilayer Laue lens fabrication
conference, August 2010
- Bouet, N.; Conley, R.; Biancarosa, J.
- SPIE Optical Engineering + Applications, SPIE Proceedings
Photoluminescence characterization of SF6-O2 plasma etching of silicon
journal, January 1996
- Buyanova, I. A.; Henry, A.; Monemar, B.
- Materials Science and Engineering: B, Vol. 36, Issue 1-3, p. 100-103
Wedged multilayer Laue lens
journal, May 2008
- Conley, Ray; Liu, Chian; Qian, Jun
- Review of Scientific Instruments, Vol. 79, Issue 5
The NSLS-II multilayer Laue lens deposition system
conference, August 2009
- Conley, Ray; Bouet, Nathalie; Biancarosa, James
- SPIE Optical Engineering + Applications, SPIE Proceedings
Multilayer growth in the APS rotary deposition system
conference, September 2007
- Conley, Ray; Liu, Chian; Kewish, Cameron M.
- Optical Engineering + Applications, SPIE Proceedings
Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures
journal, August 2002
- de Boer, M. J.; Gardeniers, J. G. E.; Jansen, H. V.
- Journal of Microelectromechanical Systems, Vol. 11, Issue 4, p. 385-401
Developments of Plasma Etching Technology for Fabricating Semiconductor Devices
journal, March 2008
- Abe, Haruhiko; Yoneda, Masahiro; Fujiwara, Nobuo
- Japanese Journal of Applied Physics, Vol. 47, Issue 3
Sectioning of multilayers to make a multilayer Laue lens
journal, January 2007
- Kang, Hyon Chol; Stephenson, G. Brian; Liu, Chian
- Review of Scientific Instruments, Vol. 78, Issue 4
Focusing of hard x-rays to 16 nanometers with a multilayer Laue lens
journal, June 2008
- Kang, Hyon Chol; Yan, Hanfei; Winarski, Robert P.
- Applied Physics Letters, Vol. 92, Issue 22
Reactive etching mechanism of tungsten silicide in CF4-O2 plasma
journal, August 1984
- Lee, Young H.; Chen, Mao-Min; Ahn, Kie Y.
- Thin Solid Films, Vol. 118, Issue 2, p. 149-154
Multilayer Laue lenses as high-resolution x-ray optics
conference, November 2004
- Maser, Joerg; Stephenson, Gregory B.; Vogt, Stefan
- Optical Science and Technology, the SPIE 49th Annual Meeting, SPIE Proceedings
Competitive reactions of fluorine and oxygen with W, WSi 2 , and Si surfaces in reactive ion etching using CF 4 /O 2
journal, May 1989
- Oehrlein, Gottlieb S.; Lindstöm, J. Lennart
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3
The development of a tapered silicon micro-micromachining process for 3D microsystems packaging
journal, October 2008
- Ranganathan, N.; Lee, D. Y.; Ebin, L.
- Journal of Micromechanics and Microengineering, Vol. 18, Issue 11
WSi 2 /Poly-Si Gate Etching Using a TiON Hard Mask
journal, April 1998
- Tabara, Suguru; Hibino, Satoshi; Nakaya, Hiroshi
- Japanese Journal of Applied Physics, Vol. 37, Issue Part 1, No. 4B
Investigation of etching and deposition processes of Cl 2 /O 2 /Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments
journal, April 2009
- Tinck, S.; Boullart, W.; Bogaerts, A.
- Journal of Physics D: Applied Physics, Vol. 42, Issue 9
Low temperature reactive ion etching of silicon with SF[sub 6]/O[sub 2] plasmas
journal, March 1997
- Wells, T.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, Issue 2