Hardness Assurance for Low-Energy Proton-Induced Single-Event Effects: Final report for LDRD Project 173134
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
This report briefly summarizes three publications that resulted from a two-year LDRD. The three publications address a recently emerging reliability issue: namely, that low-energy protons (LEPs) can cause single-event effects (SEEs) in highly scaled microelectronics. These publications span from low to high technology readiness levels. In the first, novel experiments were used to prove that proton direct ionization is the dominant mechanism for LEP-induced SEEs. In the second, a simple method was developed to calculate expected on-orbit error rates for LEP effects. This simplification was enabled by creating (and characterizing) an accelerated space-like LEP environment in the laboratory. In the third publication, this new method was applied to many memory circuits from the 20-90 nm technology nodes to study the general importance of LEP effects, in terms of their contribution to the total on-orbit SEE rate.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1221947
- Report Number(s):
- SAND2015-7243; 604075
- Country of Publication:
- United States
- Language:
- English
Similar Records
The contribution of low-energy protons to the total on-orbit SEU rate
A critical examination of charge funneling and its impact on single-event upset in Si devices