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Title: Hardness Assurance for Low-Energy Proton-Induced Single-Event Effects: Final report for LDRD Project 173134

This report briefly summarizes three publications that resulted from a two-year LDRD. The three publications address a recently emerging reliability issue: namely, that low-energy protons (LEPs) can cause single-event effects (SEEs) in highly scaled microelectronics. These publications span from low to high technology readiness levels. In the first, novel experiments were used to prove that proton direct ionization is the dominant mechanism for LEP-induced SEEs. In the second, a simple method was developed to calculate expected on-orbit error rates for LEP effects. This simplification was enabled by creating (and characterizing) an accelerated space-like LEP environment in the laboratory. In the third publication, this new method was applied to many memory circuits from the 20-90 nm technology nodes to study the general importance of LEP effects, in terms of their contribution to the total on-orbit SEE rate.
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Technical Report
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States