Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility Three-Dimensional Dirac Semimetal Cd 3 As 2

Zhao, Yanfei; Liu, Haiwen; Zhang, Chenglong; Wang, Huichao; Wang, Junfeng; Lin, Ziquan; Xing, Ying; Lu, Hong; Liu, Jun; Wang, Yong; Brombosz, Scott M.; Xiao, Zhili; Jia, Shuang; Xie, X. C.; Wang, Jian

doi:10.1103/PhysRevX.5.031037

Title: Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility Three-Dimensional Dirac Semimetal ${Cd}_{3} {As}_{2}$

Journal Article · Wed Sep 16 00:00:00 EDT 2015 · Physical Review. X

DOI:https://doi.org/10.1103/PhysRevX.5.031037· OSTI ID:1221693

Zhao, Yanfei; Liu, Haiwen; Zhang, Chenglong; Wang, Huichao; Wang, Junfeng; Lin, Ziquan; Xing, Ying; Lu, Hong; Liu, Jun; Wang, Yong; Brombosz, Scott M.; Xiao, Zhili; Jia, Shuang; Xie, X. C.; Wang, Jian

Three-dimensional (3D) topological Dirac semimetals have a linear dispersion in the 3D momentum space and are viewed as the 3D analogues of graphene. Here, we report angle dependent magnetotransport on the newly revealed Cd₃As₂ single crystals and clearly show how the Fermi surface evolves with crystallographic orientations. Remarkably, when the magnetic field lies in [112] or [44$$\bar{1}$$] axis, magnetoresistance oscillations with only single period are present. However, the oscillation shows double periods when the field is applied along [1$$\bar{1}$$0] direction. Moreover, aligning the magnetic field at certain directions also gives rise to double period oscillations. We attribute the observed anomalous oscillation behavior to the sophisticated geometry of Fermi surface and illustrate a complete 3D Fermi surfaces with two nested anisotropic ellipsoids around the Dirac points. Additionally, a sub-millimeter mean free path at 6 K is found in Cd₃As₂ crystals, indicating ballistic transport in this material. By measuring the magnetoresistance up to 60 T, we reach the quantum limit (n = 1 Landau level) at about 43 T. Lastly, these results improve the knowledge of the Dirac semimetal material Cd₃As₂, and also pave the way for proposing new electronic applications based on 3D Dirac materials.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC)

Grant/Contract Number:: AC02-06CH11357; 11222434; 11534001; 11174007; 2013CB934600; 2015CB921102; 2012CB921300

OSTI ID:: 1221693

Alternate ID(s):: OSTI ID: 1221641; OSTI ID: 1355461

Journal Information:: Physical Review. X, Journal Name: Physical Review. X Vol. 5 Journal Issue: 3; ISSN 2160-3308

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 179 works

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