Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

doi:10.1038/srep06604

Title: Tuning the metal-insulator crossover and magnetism in SrRuO₃ by ionic gating

Journal Article · Mon Oct 13 00:00:00 EDT 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep06604· OSTI ID:1221628

Yi, Hee Taek ^[1]; Gao, Bin ^[1]; Xie, Wei ^[2]; Cheong, Sang -Wook ^[1]; Podzorov, Vitaly ^[1]

Rutgers Univ., Piscataway, NJ (United States)
Univ. of Minnesota, Minneapolis, MN (United States)

Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO₃. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

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Research Organization:: Rutgers Univ., Piscataway, NJ (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0005464

OSTI ID:: 1221628

Journal Information:: Scientific Reports, Vol. 4; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 49 works

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