Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

Wang, Gang; Zhang, Miao; Liu, Su; Xie, Xiaoming; Ding, Guqiao; Wang, Yongqiang; Chu, Paul K.; Gao, Heng; Ren, Wei; Yuan, Qinghong; Zhang, Peihong; Wang, Xi; Di, Zengfeng

doi:10.1002/adfm.201500981

Title: Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

Journal Article · Mon May 04 00:00:00 EDT 2015 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201500981· OSTI ID:1221566

Wang, Gang ^[1]; Zhang, Miao ^[2]; Liu, Su ^[3]; Xie, Xiaoming ^[2]; Ding, Guqiao ^[2]; Wang, Yongqiang ^[4]; Chu, Paul K. ^[5]; Gao, Heng ^[6]; Ren, Wei ^[6]; Yuan, Qinghong ^[7]; Zhang, Peihong ^[8]; Wang, Xi ^[2]; Di, Zengfeng ^[2]

Chinese Academy of Sciences (CAS), Shanghai (China); Lanzhou Univ., Lanzhou (China)
Chinese Academy of Sciences (CAS), Shanghai (China)
Lanzhou Univ., Lanzhou (China)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
City Univ. of Hong Kong, Hong Kong (China)
Shanghai Univ., Shanghai (China)
East China Normal Univ. (ECNU), Shanghai (China)
Shanghai Univ., Shanghai (China); State Univ. of New York, Buffalo, NY (United States)

Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1221566

Report Number(s):: LA-UR-15-22809

Journal Information:: Advanced Functional Materials, Vol. 25, Issue 24; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 41 works

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