Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics
We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm–3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 μm and ~8 μm, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V–1 s–1 for n-GaAs and 50–240 cm V–1 s–1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.
- University of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry.
- University of Oregon, Eugene, OR (United States). Department of Physics.
- University of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry
- Lawrence Berkeley National Laboratory, Berkeley, CA (United States). The Molecular Foundry.
- Publication Date:
- OSTI Identifier:
- Grant/Contract Number:
- AC02-05CH11231; EE00065957;
- Accepted Manuscript
- Journal Name:
- Energy & Environmental Science
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 1754-5692
- Royal Society of Chemistry
- Research Org:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Country of Publication:
- United States
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