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Title: High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

This paper presents a high-temperature capable intelligent power module that contains SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter (Fig. 1) to determine the performance of the module in a system level application. The converter was operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The peak efficiency was found to be 97.5% at 2.9 kW.
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  1. APEI, Inc.
  2. ORNL
  3. University of Arkansas
Publication Date:
OSTI Identifier:
DOE Contract Number:
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Resource Relation:
Conference: 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, Knoxville, TN, USA, 20141013, 20141015
Research Org:
Oak Ridge National Laboratory (ORNL)
Sponsoring Org:
ORNL work for others
Country of Publication:
United States