Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

Zhou, Miao; Ming, Wenmei; Liu, Zheng; Wang, Zhengfei; Yao, Yugui; Liu, Feng

doi:10.1038/srep07102

Title: Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

Journal Article · Wed Nov 19 00:00:00 EST 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep07102· OSTI ID:1213478

Zhou, Miao ^[1]; Ming, Wenmei ^[1]; Liu, Zheng ^[1]; Wang, Zhengfei ^[1]; Yao, Yugui ^[2]; Liu, Feng ^[3]

Univ. of Utah, Salt Lake City, UT (United States)
Beijing Institute of Technology, Beijing (China)
Univ. of Utah, Salt Lake City, UT (United States); Collaborative Innovation Center of Quantum Matter, Beijing (China)

For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ≥0.5 eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.

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Research Organization:: Univ. of Utah, Salt Lake City, UT (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-04ER46148

OSTI ID:: 1213478

Journal Information:: Scientific Reports, Vol. 4; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 71 works

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