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Title: Compensation mechanism of bromine dopants in cadmium telluride single crystals

We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.
 [1] ;  [2] ;  [2] ;  [3] ;  [3] ;  [2] ;  [1] ;  [3]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Yuriy Fed'kovych Chernivtsi National Univ., Chernivtsi (Ukraine)
  3. "Vasyl Stefanyk Precarpathian National Univ.", Ivano-Frankivsk (Ukraine)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0022-0248; NN2001; TRN: US1500638
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 415; Journal Issue: C; Journal ID: ISSN 0022-0248
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
Country of Publication:
United States
36 MATERIALS SCIENCE computer simulation; point defects; Bridgman technique; semiconducting cadmium compounds