Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; Chen, Long-Qing; Kalinin, Sergei V.; Maksymovych, Petro

doi:10.1063/1.4926329

Title: Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

Journal Article · Mon Jul 13 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926329· OSTI ID:1212357

Cao, Ye ^[1];

^[1]; Morozovska, Anna N. ^[2]; Chen, Long-Qing ^[3];

^[1]; Maksymovych, Petro ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine). Inst. of Physics (ISP)
Pennsylvania State Univ., State College, PA (United States). Dept. of Material Sciences and Engineering

The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr_0.2Ti_0.8)O3) junction in applied electric field. We revealed an up to 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-07ER46417; AC0500OR22725

OSTI ID:: 1212357

Alternate ID(s):: OSTI ID: 1226773

Journal Information:: Applied Physics Letters, Vol. 107, Issue 2; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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Dynamic X-ray diffraction imaging of the ferroelectric response in bismuth ferrite Laanait, Nouamane; Saenrang, Wittawat; Zhou, Hua Advanced Structural and Chemical Imaging, Vol. 3, Issue 1 https://doi.org/10.1186/s40679-017-0044-3	journal	March 2017

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Title: Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

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