Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Journal Article · Thu Dec 04 00:00:00 EST 2014 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-014-3536-0· OSTI ID:1212213

Wu, Fangzhen; Wang, Huanhuan; Raghothamachar, Balaji; Dudley, Michael; Chung, Gil; Zhang, Jie; Thomas, Bernd; Sanchez, Edward K.; Mueller, Stephan G.; Hansen, Darren; Loboda, Mark J.; Zhang, Lihua; Su, Dong; Kisslinger, Kim; Stach, Eric ^[1]

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1. BNL

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
• Sponsoring Organization: INDUSTRY
• OSTI ID: 1212213
• Journal Information: Journal of Electronic Materials, Vol. 44, Issue 5; ISSN 0361-5235
• Publisher: Springer
• Country of Publication: United States
• Language: ENGLISH