Phase transitions in metastable phases of silicon

Zeng, Zhidan; Zeng, Qiaoshi; Mao, Wendy L.; Qu, Shaoxing

doi:10.1063/1.4868156

Title: Phase transitions in metastable phases of silicon

Journal Article · Fri Mar 14 00:00:00 EDT 2014 · J. Appl. Phys.

DOI:https://doi.org/10.1063/1.4868156· OSTI ID:1210835

Zeng, Zhidan; Zeng, Qiaoshi; Mao, Wendy L.; Qu, Shaoxing

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: SC0001057

OSTI ID:: 1210835

Journal Information:: J. Appl. Phys., Vol. 115; Related Information: EFree partners with Carnegie Institution of Washington (lead); California Institute of Technology; Colorado School of Mines; Cornell University; Lehigh University; Pennsylvania State University

Country of Publication:: United States

Language:: English

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New high-pressure phase of Si McMahon, M. I.; Nelmes, R. J. Physical Review B, Vol. 47, Issue 13 https://doi.org/10.1103/physrevb.47.8337	journal	April 1993
Thermal Conductivity of Nanocrystalline Silicon: Importance of Grain Size and Frequency-Dependent Mean Free Paths Wang, Zhaojie; Alaniz, Joseph E.; Jang, Wanyoung Nano Letters, Vol. 11, Issue 6 https://doi.org/10.1021/nl1045395	journal	June 2011
Phase transformations of silicon caused by contact loading Kailer, A.; Gogotsi, Y. G.; Nickel, K. G. Journal of Applied Physics, Vol. 81, Issue 7 https://doi.org/10.1063/1.364340	journal	April 1997
Raman scattering in metallic Si and Ge up to 50 GPa Olijnyk, Helmut Physical Review Letters, Vol. 68, Issue 14 https://doi.org/10.1103/physrevlett.68.2232	journal	April 1992
Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium Jamieson, J. C. Science, Vol. 139, Issue 3556 https://doi.org/10.1126/science.139.3556.762	journal	February 1963
Electrical properties of semimetallic silicon III and semiconductive silicon IV at ambient pressure Besson, J. M.; Mokhtari, E. H.; Gonzalez, J. Physical Review Letters, Vol. 59, Issue 4 https://doi.org/10.1103/PhysRevLett.59.473	journal	July 1987
Crystal data for high-pressure phases of silicon Hu, Jing Zhu; Merkle, Larry D.; Menoni, Carmen S. Physical Review B, Vol. 34, Issue 7 https://doi.org/10.1103/PhysRevB.34.4679	journal	October 1986
In situ x-ray diffraction study of silicon at pressures up to 15.5 GPa and temperatures up to 1073 K Voronin, G. A.; Pantea, C.; Zerda, T. W. Physical Review B, Vol. 68, Issue 2 https://doi.org/10.1103/PhysRevB.68.020102	journal	July 2003
New high-pressure phase of Si McMahon, M. I.; Nelmes, R. J. Physical Review B, Vol. 47, Issue 13 https://doi.org/10.1103/PhysRevB.47.8337	journal	April 1993
Structure and properties of silicon XII: A complex tetrahedrally bonded phase Piltz, R. O.; Maclean, J. R.; Clark, S. J. Physical Review B, Vol. 52, Issue 6 https://doi.org/10.1103/PhysRevB.52.4072	journal	August 1995
Comment on ``Experimental evidence for semiconducting behavior of Si-XII'' Chaudhri, M. Munawar Physical Review B, Vol. 84, Issue 23 https://doi.org/10.1103/PhysRevB.84.237301	journal	December 2011
Raman Scattering from Phonons in Polymorphs of Si and Ge Kobliska, R. J.; Solin, S. A.; Selders, M. Physical Review Letters, Vol. 29, Issue 11 https://doi.org/10.1103/PhysRevLett.29.725	journal	September 1972
Raman scattering and phonon dispersion in Si and GaP at very high pressure Weinstein, Bernard A.; Piermarini, G. J. Physical Review B, Vol. 12, Issue 4 https://doi.org/10.1103/PhysRevB.12.1172	journal	August 1975
Raman scattering in metallic Si and Ge up to 50 GPa Olijnyk, Helmut Physical Review Letters, Vol. 68, Issue 14 https://doi.org/10.1103/PhysRevLett.68.2232	journal	April 1992
Effect of Pressure on Raman Spectra of Metastable Phases of Si and Ge Olijnyk, H.; Jephcoat, A. P. physica status solidi (b), Vol. 211, Issue 1 https://doi.org/10.1002/(SICI)1521-3951(199901)211:1<413::AID-PSSB413>3.0.CO;2-B	journal	January 1999
Experimental evidence for semiconducting behavior of Si-XII Ruffell, S.; Sears, K.; Knights, A. P. Physical Review B, Vol. 83, Issue 7 https://doi.org/10.1103/PhysRevB.83.075316	journal	February 2011
Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and $α - S n$ : Anharmonic effects Menéndez, José; Cardona, Manuel Physical Review B, Vol. 29, Issue 4 https://doi.org/10.1103/PhysRevB.29.2051	journal	February 1984

Cited By (5)

Nano-deformation behavior of silicon (100) film studied by depth sensing indentation and nanoscratch technique Geetha, D.; Pratyank, R.; Kiran, P. Materials Research Express, Vol. 5, Issue 4 https://doi.org/10.1088/2053-1591/aab910	journal	April 2018
A Review on Micro- and Nanoscratching/Tribology at High Temperatures: Instrumentation and Experimentation Chavoshi, Saeed Zare; Xu, Shuozhi Journal of Materials Engineering and Performance, Vol. 27, Issue 8 https://doi.org/10.1007/s11665-018-3493-5	journal	July 2018
Thermal evolution of the indentation-induced phases of silicon Wong, S.; Johnson, B. C.; Haberl, B. Journal of Applied Physics, Vol. 126, Issue 10 https://doi.org/10.1063/1.5108751	journal	September 2019
In-situ high temperature micro-Raman investigation of annealing behavior of high-pressure phases of Si Mannepalli, Sowjanya; Mangalampalli, Kiran S. R. N. Journal of Applied Physics, Vol. 125, Issue 22 https://doi.org/10.1063/1.5099325	journal	June 2019
Analysis of residual stress around a Berkovich nano-indentation by micro-Raman spectroscopy Ma, Lulu; Xing, Huadan; Ding, Qi AIP Advances, Vol. 9, Issue 1 https://doi.org/10.1063/1.5080179	journal	January 2019

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Title: Phase transitions in metastable phases of silicon

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