Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)-√3×√3 substrate

Journal Article · Mon Dec 29 00:00:00 EST 2014 · Physical Review B (Condensed Matter and Materials Physics)

DOI:https://doi.org/10.1103/PhysRevB.90.245433· OSTI ID:1210743

Huang, Z.-Q.; Chou, B.-H.; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC0012575
• OSTI ID: 1210743
• Journal Information: Physical Review B (Condensed Matter and Materials Physics), Vol. 90; Related Information: CCDM partners with Temple University (lead); Brookhaven National Laboratory; Drexel University; Duke University; North Carolina State University; Northeastern University; Princeton University; Rice University; University of Pennsylvania
• Country of Publication: United States
• Language: English

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