Bi flux-dependent MBE growth of GaSbBi alloys

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

doi:10.1016/j.jcrysgro.2015.02.093

Title: Bi flux-dependent MBE growth of GaSbBi alloys

Journal Article · Tue Sep 01 00:00:00 EDT 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2015.02.093· OSTI ID:1209828

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; Jones, T. S.; Ashwin, M. J.;

The incorporation of Bi in GaSb_1-xBi_x alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h⁻¹). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0 < x ≤ 4.5%. The GaSbBi samples grown at the lowest Bi fluxes have smooth surfaces free of metallic droplets. The higher Bi flux samples have surface Bi droplets. The room temperature band gap of the GaSbBi epitaxial layers determined from optical absorption decreases linearly with increasing Bi content with a reduction of ~32 meV/%Bi.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: EP/G004447/2; EP/H021388/1; AC02-05CH11231

OSTI ID:: 1209828

Alternate ID(s):: OSTI ID: 1208644

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 425 Journal Issue: C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

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Cited by: 23 works

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References (20)

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36 MATERIALS SCIENCE
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