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Title: Carbon p electron ferromagnetism in silicon carbide

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [5] ;  [4] ;  [6] ;  [6] ;  [6] ;  [3] ;  [7] ;  [1] ;  [4]
  1. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Technische Univ. Dresden, Dresden (Germany)
  2. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Chinese Academy of Sciences, Beijing (China)
  3. Chinese Academy of Sciences, Beijing (China)
  4. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  6. Technische Univ. Chemnitz, Chemnitz (Germany)
  7. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Technische Univ. Chemnitz, Chemnitz (Germany)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal ID: ISSN 2045-2322
Nature Publishing Group
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org:
Country of Publication:
United States
36 MATERIALS SCIENCE semiconductors; magnetic properties and materials