Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

Guo, Hangwen; Dong, Shuai; Rack, Philip D.; Budai, John D.; Beekman, Christianne; Gai, Zheng; Siemons, Wolter; Gonzalez, C. M.; Timilsina, R.; Wong, Anthony T.; Herklotz, Andreas; Snijders, Paul C.; Dagotto, Elbio; Ward, Thomas Z.

doi:10.1103/PhysRevLett.114.256801

Title: Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

Journal Article · Thu Jun 25 00:00:00 EDT 2015 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.114.256801· OSTI ID:1198520

Guo, Hangwen; Dong, Shuai; Rack, Philip D.; Budai, John D.; Beekman, Christianne; Gai, Zheng; Siemons, Wolter; Gonzalez, C. M.; Timilsina, R.; Wong, Anthony T.; Herklotz, Andreas; Snijders, Paul C.; Dagotto, Elbio; Ward, Thomas Z.

We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La_0.7Sr_0.3MnO₃ thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. As a result, the ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials’ functional properties.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002136; AC05-00OR22725

OSTI ID:: 1198520

Alternate ID(s):: OSTI ID: 1190744

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Vol. 114 Journal Issue: 25; ISSN 0031-9007

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 63 works

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