Graphene-silicon layered structures on single-crystalline Ir(111) thin films
- Chinese Academy of Sciences (CAS), Beijing (China)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Univ. Augsburg, Augsburg (Germany)
Epitaxial growth of graphene on transition metal crystals, such as Ru,⁽¹⁻³⁾ Ir,⁽⁴⁻⁶⁾ and Ni,⁽⁷⁾ provides large-area, uniform graphene layers with controllable defect density, which is crucial for practical applications in future devices. To decrease the high cost of single-crystalline metal bulks, single-crystalline metal films are strongly suggested as the substrates for epitaxial growth large-scale high-quality graphene.⁽⁸⁻¹⁰⁾ Moreover, in order to weaken the interactions of graphene with its metal host, which may result in a suppression of the intrinsic properties of graphene,⁽¹¹ ¹²⁾ the method of element intercalation of semiconductors at the interface between an epitaxial graphene layer and a transition metal substrate has been successfully realized.⁽¹³⁻¹⁶⁾
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704
- OSTI ID:
- 1193196
- Report Number(s):
- BNL-107859-2015-JA; R&D Project: MA015MACA; KC0201010
- Journal Information:
- Advanced Materials Interfaces, Vol. 2, Issue 3; ISSN 2196-7350
- Publisher:
- Wiley-VCHCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Observation of van Hove Singularities in Twisted Silicene Multilayers
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journal | July 2016 |
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