LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system

Zou, K.; Ismail-Beigi, Sohrab; Kisslinger, Kim; Shen, Xuan; Su, Dong; Walker, F. J.; Ahn, C. H.

doi:10.1063/1.4914310

Title: LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system

Journal Article · Sun Mar 01 00:00:00 EST 2015 · APL Materials

DOI:https://doi.org/10.1063/1.4914310· OSTI ID:1191184

Zou, K. ^[1]; Ismail-Beigi, Sohrab ^[1]; Kisslinger, Kim ^[2]; Shen, Xuan ^[3]; Su, Dong ^[2]; Walker, F. J. ^[1]; Ahn, C. H. ^[1]

Yale Univ., New Haven, CT (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Nanjing Univ. (China)

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO₃, and a band insulator, KTaO₃. For LaTiO₃/KTaO₃ interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO₃-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm²/V s) of SrTiO₃ at room temperature. By using KTaO₃, we achieve mobilities in LaTiO₃/KTaO₃ interfaces as high as 21 cm²/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO₃. By density functional theory, we attribute the higher mobility in KTaO₃ 2DEGs to the smaller effective mass for electrons in KTaO₃.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-98CH10886

OSTI ID:: 1191184

Journal Information:: APL Materials, Vol. 3, Issue 3; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 78 works

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