Phase transformation as the single-mode mechanical deformation of silicon

Wong, Sherman; Haberl, Bianca; Williams, James S.; Bradby, Jodie E.

doi:10.1063/1.4923205

Title: Phase transformation as the single-mode mechanical deformation of silicon

Journal Article · Thu Jun 25 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4923205· OSTI ID:1190758

Wong, Sherman ^[1]; Haberl, Bianca ^[2]; Williams, James S. ^[1]; Bradby, Jodie E. ^[1]

Australian National Univ., Canberra (Australia)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

The mixture of the metastable body-centered cubic (bc8) and rhombohedral (r8) phases of silicon that is formed via nanoindentation of diamond cubic (dc) silicon exhibits properties that are of scientifc and technological interest. This letter demonstrates that large regions of this mixed phase can be formed in crystalline Si via nanoindentation without signifcant damage to the surrounding crystal. Cross-sectional transmission electron microscopy is used to show that volumes 6 μm wide and up to 650 nm deep can be generated in this way using a spherical tip of ~21.5 μm diameter. The phase transformed region is characterised using both Raman microspectroscopy and transmission electron microscopy. It is found that uniform loading using large spherical indenters can favor phase transformation as the sole deformation mechanism as long as the maximum load is below a critical level. We suggest that the sluggish nature of the transformation from the dc-Si phase to the metallic (b-Sn) phase normally results in competing deformation mechanisms such as slip and cracking but these can be suppressed by controlled loading conditions.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1190758

Alternate ID(s):: OSTI ID: 1226765

Journal Information:: Applied Physics Letters, Vol. 106, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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Origin of a Nanoindentation Pop-in Event in Silicon Crystal Abram, R.; Chrobak, D.; Nowak, R. Physical Review Letters, Vol. 118, Issue 9 https://doi.org/10.1103/physrevlett.118.095502	journal	March 2017
Nanoindentation Induced Deformation and Pop-in Events in a Silicon Crystal: Molecular Dynamics Simulation and Experiment Jiapeng, Sun; Cheng, Li; Han, Jing Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-11130-2	journal	August 2017

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