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Title: Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. We also report on the device's optical response characteristics at 78 K.
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  1. Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
  2. Arizona State Univ., Tempe, AZ (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0003-6951; APPLAB; 553947
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 7; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
36 MATERIALS SCIENCE III-V semiconductors; photoluminescence; diffusion; carrier generation; electron beams