Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; Droubay, Timothy; Bowden, Mark; Chrysler, Matthew; Su, Dong; Chambers, Scott A.; Ngai, Joseph H.

doi:10.1002/admi.201400497

Title: Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

Journal Article · Mon Feb 09 00:00:00 EST 2015 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201400497· OSTI ID:1188248

Jahangir-Moghadam, Mohammadreza ^[1]; Ahmadi-Majlan, Kamyar ^[2]; Shen, Xuan ^[3]; Droubay, Timothy ^[4]; Bowden, Mark ^[5]; Chrysler, Matthew ^[6]; Su, Dong ^[7]; Chambers, Scott A. ^[4]; Ngai, Joseph H. ^[6]

Univ. of Texas, Arlington, TX (United States). Dept. of Physics and Dept. of Electrical Engineering
Univ. of Texas, Arlington, TX (United States). Dept. of Physics and Deptt of Materials Science and Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials; Nanjing Univ. (China). National Lab. of Solid State Microstructures and Dept. of Materials Science and Engineering
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical Sciences Div.
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab.
Univ. of Texas, Arlington, TX (United States). Dept. of Physics
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr_xTi_1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural and electrical characterization of SrZr_xTi_1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704

OSTI ID:: 1188248

Report Number(s):: BNL-108045-2015-JA; KC0403020

Journal Information:: Advanced Materials Interfaces, Vol. 2, Issue 4; ISSN 2196-7350

Publisher:: Wiley-VCHCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui arXiv https://doi.org/10.48550/arxiv.1806.11140	text	January 2018
Crystalline SrZrO ₃ deposition on Ge (001) by atomic layer deposition for high- k dielectric applications Hu, Shen; Ji, Li; Chen, Pei-Yu Journal of Applied Physics, Vol. 124, Issue 4 https://doi.org/10.1063/1.5026790	journal	July 2018
Chemical and electronic structure analysis of a SrTiO3 (001)/p-Ge (001) hydrogen evolution photocathode Stoerzinger, Kelsey A.; Du, Yingge; Spurgeon, Steven R. MRS Communications, Vol. 8, Issue 02 https://doi.org/10.1557/mrc.2018.38	journal	March 2018
Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb ₂ Se ₃ /ZnS Heterointerfaces Siol, Sebastian; Schulz, Philip; Young, Matthew Advanced Materials Interfaces, Vol. 3, Issue 24 https://doi.org/10.1002/admi.201600755	journal	November 2016
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices Kumah, Divine P.; Ngai, Joseph H.; Kornblum, Lior Advanced Functional Materials https://doi.org/10.1002/adfm.201901597	journal	July 2019
Interfacial structure of SrZr _x Ti ₁₋ _x O ₃ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui Applied Physics Letters, Vol. 113, Issue 20 https://doi.org/10.1063/1.5046394	journal	November 2018

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