Evidence for the temperature dependence of phase transformation behavior of silicon at nanoscale

Tran, Tuan; Smillie, Lachlan; Haberl, Bianca; Subianto, D.; Williams, James S.; Bradby, Jodie E.

doi:10.1063/1.4921534

Title: Evidence for the temperature dependence of phase transformation behavior of silicon at nanoscale

Journal Article · Wed May 27 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4921534· OSTI ID:1185893

Tran, Tuan ^[1]; Smillie, Lachlan ^[1]; Haberl, Bianca ^[2]; Subianto, D. ^[1]; Williams, James S. ^[1]; Bradby, Jodie E. ^[1]

Australian National Univ., Canberra, ACT (Australia)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

This study uses the in-situ high-temperature nanoindentation coupled with electrical measurements to investigate the temperature dependence (25 to 200 C) of the phase transformation behavior of crystalline silicon (dc-Si) at the nanoscale. Along with in-situ indentation and electrical data, ex-situ characterizations such as Raman and cross-sectional transmission electron microscopy (XTEM) have been used to reveal the dominant mode of deformation under the indenter. In contrast to the previous studies, the dominant mode of deformation under the nanoindenter at elevated temperatures is not the dc-Si to metallic phase ( -Sn) transformation. Instead, XTEM images from 150 C indents reveal that the dominant mode of deformation is twinning along {111} planes. While the in-situ high-temperature electrical measurements show an increase in the current due to metallic phase formation up to 125 C, it is absent 150 C, revealing that the formation of the metallic phase is negligible in this regime. Thus, this work provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nanoscale.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1185893

Alternate ID(s):: OSTI ID: 1228159

Journal Information:: Journal of Applied Physics, Vol. 117; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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References (48)

High-pressure phases of group-IV, III–V, and II–VI compounds Mujica, A.; Rubio, Angel; Muñoz, A. Reviews of Modern Physics, Vol. 75, Issue 3 https://doi.org/10.1103/RevModPhys.75.863	journal	July 2003
On the cyclic indentation behavior of crystalline silicon with a sharp tip Fujisawa, N.; Williams, J. S.; Swain, M. V. Journal of Materials Research, Vol. 22, Issue 11 https://doi.org/10.1557/JMR.2007.0406	journal	November 2007
Ab initio study of silicon in the $R 8$ phase Pfrommer, Bernd G.; Co⁁té, Michel; Louie, Steven G. Physical Review B, Vol. 56, Issue 11 https://doi.org/10.1103/PhysRevB.56.6662	journal	September 1997
First-principles pseudopotential study of the structural phases of silicon Needs, R. J.; Mujica, A. Physical Review B, Vol. 51, Issue 15 https://doi.org/10.1103/PhysRevB.51.9652	journal	April 1995
Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium Jamieson, J. C. Science, Vol. 139, Issue 3556 https://doi.org/10.1126/science.139.3556.762	journal	February 1963
Raman scattering in metallic Si and Ge up to 50 GPa Olijnyk, Helmut Physical Review Letters, Vol. 68, Issue 14 https://doi.org/10.1103/PhysRevLett.68.2232	journal	April 1992
Crystal data for high-pressure phases of silicon Hu, Jing Zhu; Merkle, Larry D.; Menoni, Carmen S. Physical Review B, Vol. 34, Issue 7 https://doi.org/10.1103/PhysRevB.34.4679	journal	October 1986
Reversible pressure-induced structural transitions between metastable phases of silicon Crain, J.; Ackland, G. J.; Maclean, J. R. Physical Review B, Vol. 50, Issue 17 https://doi.org/10.1103/PhysRevB.50.13043	journal	November 1994
Structure and properties of silicon XII: A complex tetrahedrally bonded phase Piltz, R. O.; Maclean, J. R.; Clark, S. J. Physical Review B, Vol. 52, Issue 6 https://doi.org/10.1103/PhysRevB.52.4072	journal	August 1995
Solid-solid phase transitions and soft phonon modes in highly condensed Si Chang, K. J.; Cohen, Marvin L. Physical Review B, Vol. 31, Issue 12 https://doi.org/10.1103/PhysRevB.31.7819	journal	June 1985
Ab initio survey of the electronic structure of tetrahedrally bonded phases of silicon Malone, Brad D.; Sau, Jay D.; Cohen, Marvin L. Physical Review B, Vol. 78, Issue 3 https://doi.org/10.1103/PhysRevB.78.035210	journal	July 2008
Experimental evidence for semiconducting behavior of Si-XII Ruffell, S.; Sears, K.; Knights, A. P. Physical Review B, Vol. 83, Issue 7 https://doi.org/10.1103/PhysRevB.83.075316	journal	February 2011
Patterning of silicon by indentation and chemical etching Rao, R.; Bradby, J. E.; Williams, J. S. Applied Physics Letters, Vol. 91, Issue 12 https://doi.org/10.1063/1.2779111	journal	September 2007
Electrical resistance of metallic contacts on silicon and germanium during indentation Pharr, G. M.; Oliver, W. C.; Cook, R. F. Journal of Materials Research, Vol. 7, Issue 4 https://doi.org/10.1557/JMR.1992.0961	journal	April 1992
Influence of spherical indentor radius on the indentation-induced transformation behaviour of silicon Weppelmann, E. R.; Field, J. S.; Swain, M. V. Journal of Materials Science, Vol. 30, Issue 9 https://doi.org/10.1007/BF01184600	journal	May 1995
Phase transition in diamond-structure crystals during hardness measurements Gridneva, I. V.; Milman, Yu. V.; Trefilov, V. I. Physica Status Solidi (a), Vol. 14, Issue 1 https://doi.org/10.1002/pssa.2210140121	journal	November 1972
Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations Kailer, Andreas; Nickel, Klaus G.; Gogotsi, Yury G. Journal of Raman Spectroscopy, Vol. 30, Issue 10 https://doi.org/10.1002/(SICI)1097-4555(199910)30:10<939::AID-JRS460>3.0.CO;2-C	journal	October 1999
In situ observation of the indentation-induced phase transformation of silicon thin films Gerbig, Y. B.; Michaels, C. A.; Forster, A. M. Physical Review B, Vol. 85, Issue 10 https://doi.org/10.1103/PhysRevB.85.104102	journal	March 2012
Direct observation of phase transformation anisotropy in indented silicon studied by confocal Raman spectroscopy Gerbig, Yvonne B.; Stranick, Stephan J.; Cook, Robert F. Physical Review B, Vol. 83, Issue 20 https://doi.org/10.1103/PhysRevB.83.205209	journal	May 2011
Effect of crystallographic orientation on phase transformations during indentation of silicon Gerbig, Y. B.; Stranick, S. J.; Morris, D. J. Journal of Materials Research, Vol. 24, Issue 3 https://doi.org/10.1557/jmr.2009.0122	journal	March 2009
Why Silicon Is Hard Gilman, J. J. Science, Vol. 261, Issue 5127 https://doi.org/10.1126/science.261.5127.1436	journal	September 1993
Ultra-microindentation of silicon at elevated temperatures Suzuki, Takayoshi; Ohmura, Takahito Philosophical Magazine A, Vol. 74, Issue 5 https://doi.org/10.1080/01418619608239708	journal	November 1996
Electron microscope investigation of the microplastic deformation mechanisms of silicon by indentation Eremenko, V. G.; Nikitenko, V. I. Physica Status Solidi (a), Vol. 14, Issue 1 https://doi.org/10.1002/pssa.2210140139	journal	November 1972
Two New Forms of Silicon Wentorf, R. H.; Kasper, J. S. Science, Vol. 139, Issue 3552 https://doi.org/10.1126/science.139.3552.338-a	journal	January 1963
Thermal evolution of the metastable r8 and bc8 polymorphs of silicon Haberl, Bianca; Guthrie, Malcolm; Sinogeikin, Stanislav V. High Pressure Research, Vol. 35, Issue 2 https://doi.org/10.1080/08957959.2014.1003555	journal	January 2015
Structural characterization of pressure-induced amorphous silicon Haberl, B.; Liu, A. C. Y.; Bradby, J. E. Physical Review B, Vol. 79, Issue 15 https://doi.org/10.1103/PhysRevB.79.155209	journal	April 2009
Kinetics of solid phase crystallization in amorphous silicon Olson, G. L.; Roth, J. A. Materials Science Reports, Vol. 3, Issue 1 https://doi.org/10.1016/S0920-2307(88)80005-7	journal	January 1988
The martensitic transformation in silicon—I experimental observations Pirouz, P.; Chaim, R.; Dahmen, U. Acta Metallurgica et Materialia, Vol. 38, Issue 2 https://doi.org/10.1016/0956-7151(90)90061-K	journal	February 1990
Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins Cayron, Cyril; Den Hertog, Martien; Latu-Romain, Laurence Journal of Applied Crystallography, Vol. 42, Issue 2 https://doi.org/10.1107/S0021889808042131	journal	January 2009
Hidden defects in silicon nanowires den Hertog, M. I.; Cayron, C.; Gentile, P. Nanotechnology, Vol. 23, Issue 2 https://doi.org/10.1088/0957-4484/23/2/025701	journal	December 2011
Thermal stability of metastable silicon phases produced by nanoindentation Ge, Daibin; Domnich, Vladislav; Gogotsi, Yury Journal of Applied Physics, Vol. 95, Issue 5 https://doi.org/10.1063/1.1642739	journal	March 2004
Ultra-microhardness testing procedure with Vickers indenter Antunes, J. M.; Cavaleiro, A.; Menezes, L. F. Surface and Coatings Technology, Vol. 149, Issue 1 https://doi.org/10.1016/S0257-8972(01)01413-X	journal	January 2002
An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments Oliver, W. C.; Pharr, G. M. Journal of Materials Research, Vol. 7, Issue 06, p. 1564-1583 https://doi.org/10.1557/JMR.1992.1564	journal	June 1992
Effect of temperature on metastable phases induced in silicon during nanoindentation Singh, Rajnish K.; Munroe, Paul; Hoffman, Mark Journal of Materials Research, Vol. 23, Issue 1 https://doi.org/10.1557/JMR.2008.0023	journal	January 2008
Nanoindentation-induced phase transformations in silicon at elevated temperatures Ruffell, S.; Bradby, J. E.; Williams, J. S. Nanotechnology, Vol. 20, Issue 13 https://doi.org/10.1088/0957-4484/20/13/135603	journal	March 2009
Phase stability of silicon during indentation at elevated temperature: evidence for a direct transformation from metallic Si-II to diamond cubic Si-I Bhuyan, S. K.; Bradby, J. E.; Ruffell, S. MRS Communications, Vol. 2, Issue 1 https://doi.org/10.1557/mrc.2011.24	journal	November 2011
Investigation of high-temperature plastic deformation using instrumented microindentation tests. Part IThe deformation of three aluminum alloys at 473 K to 833 K Bhakhri, V.; Klassen, R. J. Journal of Materials Science, Vol. 41, Issue 8 https://doi.org/10.1007/s10853-006-7174-7	journal	April 2006
Hot nanoindentation in inert environments Trenkle, Jonathan C.; Packard, Corinne E.; Schuh, Christopher A. Review of Scientific Instruments, Vol. 81, Issue 7 https://doi.org/10.1063/1.3436633	journal	July 2010
In situ lift-out: Steps to improve yield and a comparison with other FIB TEM sample preparation techniques Langford, R. M.; Rogers, M. Micron, Vol. 39, Issue 8 https://doi.org/10.1016/j.micron.2008.02.006	journal	December 2008
In situ electrical characterization of phase transformations in Si during indentation Bradby, J. E.; Williams, J. S.; Swain, M. V. Physical Review B, Vol. 67, Issue 8 https://doi.org/10.1103/PhysRevB.67.085205	journal	February 2003
Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process Kakiuchi, Hiroaki; Ohmi, Hiromasa; Harada, Makoto Applied Physics Letters, Vol. 91, Issue 16 https://doi.org/10.1063/1.2801516	journal	October 2007
Effect of indentation unloading conditions on phase transformation induced events in silicon Juliano, Tom; Gogotsi, Yury; Domnich, Vladislav Journal of Materials Research, Vol. 18, Issue 5 https://doi.org/10.1557/JMR.2003.0164	journal	May 2003
Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters Williams, J. S.; Chen, Y.; Wong-Leung, J. Journal of Materials Research, Vol. 14, Issue 6 https://doi.org/10.1557/JMR.1999.0310	journal	June 1999
Temperature dependent deformation mechanisms in pure amorphous silicon Kiran, M. S. R. N.; Haberl, B.; Williams, J. S. Journal of Applied Physics, Vol. 115, Issue 11 https://doi.org/10.1063/1.4869136	journal	March 2014
Deformation mode in silicon, slip or twinning? Pirouz, P. Scripta Metallurgica, Vol. 21, Issue 11 https://doi.org/10.1016/0036-9748(87)90284-5	journal	November 1987
The martensitic transformation in silicon—III. comparison with other work Pirouz, P.; Dahmen, U.; Westmacott, K. H. Acta Metallurgica et Materialia, Vol. 38, Issue 2 https://doi.org/10.1016/0956-7151(90)90063-M	journal	February 1990
Nanoindentation-induced deformation of Ge Bradby, J. E.; Williams, J. S.; Wong-Leung, J. Applied Physics Letters, Vol. 80, Issue 15 https://doi.org/10.1063/1.1469660	journal	April 2002
Mechanical deformation in silicon by micro-indentation Bradby, J. E.; Williams, J. S.; Wong-Leung, J. Journal of Materials Research, Vol. 16, Issue 5 https://doi.org/10.1557/JMR.2001.0209	journal	May 2001

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