The Seebeck Coefficient and Phonon Drag in Silicon

Mahan, Gerald; Lindsay, Lucas R.; Broido, David

doi:10.1063/1.4904925

Title: The Seebeck Coefficient and Phonon Drag in Silicon

Journal Article · Mon Dec 29 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4904925· OSTI ID:1185754

Mahan, Gerald ^[1]; Lindsay, Lucas R. ^[2]; Broido, David ^[3]

Pennsylvania State Univ., University Park, PA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Boston College, Chestnut Hill, MA (United States)

We present a theory of the phonon-drag Seebeck coe cient in nondegenerate semiconductors, and apply it to silicon for temperatures 30 < T < 300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We nd excellent agreement with the measurements of Geballe and Hull [Phys.Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1185754

Journal Information:: Journal of Applied Physics, Vol. 116; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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References (29)

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Cited By (6)

Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features Nadtochiy, Andriy; Kuryliuk, Vasyl; Strelchuk, Viktor Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-52654-z	journal	November 2019
Introduction to thermoelectrics Mahan, G. D. APL Materials, Vol. 4, Issue 10 https://doi.org/10.1063/1.4954055	journal	October 2016
Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion Zhou, Jiawei; Liao, Bolin; Qiu, Bo Proceedings of the National Academy of Sciences, Vol. 112, Issue 48 https://doi.org/10.1073/pnas.1512328112	journal	November 2015
First-principles calculations of thermal, electrical, and thermoelectric transport properties of semiconductors Zhou, Jiawei; Liao, Bolin; Chen, Gang Semiconductor Science and Technology, Vol. 31, Issue 4 https://doi.org/10.1088/0268-1242/31/4/043001	journal	March 2016
A microstructuring route to enhanced thermoelectric efficiency of reduced graphene oxide films Mehmood, Tariq; Kim, Jin Ho; Lee, Do-Joong Materials Research Express, Vol. 6, Issue 7 https://doi.org/10.1088/2053-1591/ab18d7	journal	April 2019
Thermoelectric coefficients of $n$ -doped silicon from first principles via the solution of the Boltzmann transport equation Fiorentini, Mattia; Bonini, Nicola Physical Review B, Vol. 94, Issue 8 https://doi.org/10.1103/physrevb.94.085204	journal	August 2016

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