Effect of Doping on Surface Reactivity and Conduction Mechanism in Sm-doped CeO2 Thin Films

Yang, Nan; Belianinov, Alex; Strelcov, Evgheni; Tebano, Antonello; Daniele, Di Castro; Schlueter, Christoph; Lee, Tien-Lin; Baddorf, Arthur P.; Wisinger, Nina; Jesse, Stephen; Kalinin, Sergei V; Balestrino, Giuseppe; Aruta, Carmela

doi:10.1021/nn505345c

Title: Effect of Doping on Surface Reactivity and Conduction Mechanism in Sm-doped CeO2 Thin Films

Journal Article · Fri Nov 21 00:00:00 EST 2014 · Advanced Functional Materials

DOI:https://doi.org/10.1021/nn505345c· OSTI ID:1185545

Yang, Nan ^[1]; Belianinov, Alex ^[2]; Strelcov, Evgheni ^[2]; Tebano, Antonello ^[1]; Daniele, Di Castro ^[1]; Schlueter, Christoph ^[3]; Lee, Tien-Lin ^[3]; Baddorf, Arthur P. ^[2]; Wisinger, Nina ^[2]; Jesse, Stephen ^[2]; Kalinin, Sergei V ^[4]; Balestrino, Giuseppe ^[4]; Aruta, Carmela ^[5]

Univ. of Rome Tor Vergata (Italy)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Science and Technology Facilities Council (STFC), Harwell Campus, Oxford (United Kingdom). Diamond Light Source, Ltd.
ORNL
University of Roma Tor Vergata, Italy

A systematic study by reversible and hysteretic electrochemical strain microscopy (ESM) in samples of Cerium oxide with different Sm content and in several working conditions allows disclosing the microscopic mechanism underlying the difference in electrical conduction mechanism and related surface activity, such as water adsorption and dissociation with subsequent proton liberation. We measure the behavior of the reversible hysteresis loops by changing temperature and humidity, both in standard ESM configuration and using the first order reversal curve method. The measurements have been performed at much lower temperature ranges with respect to alternative measuring techniques. Complementing our study with hard x-ray photoemission spectroscopy and irreversible scanning probe measurements we find that water incorporation is favored until the doping with Sm is too high to allow the presence of Ce³⁺. The influence of doping on the surface reactivity clearly emerges from all of our experimental results. We find that at lower Sm concentration proton conduction is prevalent, featured by lower activation energy and higher electrical conductivity. The defect concentrations determine the type of the prevalent charge carrier in a doping dependent manner.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725; CNMS2014-046

OSTI ID:: 1185545

Alternate ID(s):: OSTI ID: 1286788

Journal Information:: Advanced Functional Materials, Vol. 8, Issue 12

Country of Publication:: United States

Language:: English

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Cited by: 33 works

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