Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

doi:10.1038/ncomms7067

Title: Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

Journal Article · Wed Jan 14 00:00:00 EST 2015 · Nature Communications

DOI:https://doi.org/10.1038/ncomms7067· OSTI ID:1185502

Ponath, Patrick ^[1]; Fredrickson, Kurt ^[1]; Posadas, Agham B. ^[1]; Ren, Yuan ^[1]; Vasudevan, Rama K. ^[2]; Okatan, Mahmut Baris ^[2]; Jesse, Stephen ^[2]; Aoki, Toshihiro ^[3]; McCartney, Martha ^[3]; Smith, David J. ^[3]; Kalinin, Sergei V. ^[2]; Lai, Keji ^[1]; Demkov, Alexander A. ^[1]

Univ. of Texas, Austin, TX (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Arizona State Univ., Mesa, AZ (United States)

The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1185502

Journal Information:: Nature Communications, Vol. 6; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 62 works

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References (48)

Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application Niu, G.; Yin, S.; Saint-Girons, G. Microelectronic Engineering, Vol. 88, Issue 7 https://doi.org/10.1016/j.mee.2011.03.028	journal	July 2011
Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon McKee, R. A.; Walker, F. J.; Conner, J. R. Applied Physics Letters, Vol. 59, Issue 7 https://doi.org/10.1063/1.105341	journal	August 1991
Band Excitation Scanning Probe Microscopies Jesse, Stephen; Kumar, Amit; Kalinin, Sergei V. Microscopy Today, Vol. 18, Issue 6 https://doi.org/10.1017/S155192951000101X	journal	November 2010
Academic and industry research progress in germanium nanodevices Pillarisetty, Ravi Nature, Vol. 479, Issue 7373 https://doi.org/10.1038/nature10678	journal	November 2011
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode Dubourdieu, Catherine; Bruley, John; Arruda, Thomas M. Nature Nanotechnology, Vol. 8, Issue 10 https://doi.org/10.1038/nnano.2013.192	journal	September 2013
The band excitation method in scanning probe microscopy for rapid mapping of energy dissipation on the nanoscale Jesse, Stephen; Kalinin, Sergei V.; Proksch, Roger Nanotechnology, Vol. 18, Issue 43 https://doi.org/10.1088/0957-4484/18/43/435503	journal	September 2007
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
Crystalline Oxides on Silicon: The First Five Monolayers McKee, R. A.; Walker, F. J.; Chisholm, M. F. Physical Review Letters, Vol. 81, Issue 14 https://doi.org/10.1103/PhysRevLett.81.3014	journal	October 1998
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
A Ferroelectric Oxide Made Directly on Silicon Warusawithana, M. P.; Cen, C.; Sleasman, C. R. Science, Vol. 324, Issue 5925 https://doi.org/10.1126/science.1169678	journal	April 2009
Ferroelectric Field Effect Transistors for Memory Applications Hoffman, Jason; Pan, Xiao; Reiner, James W. Advanced Materials, Vol. 22, Issue 26-27 https://doi.org/10.1002/adma.200904327	journal	April 2010
Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates Merckling, C.; Saint-Girons, G.; Botella, C. Applied Physics Letters, Vol. 98, Issue 9 https://doi.org/10.1063/1.3558997	journal	February 2011
Special points for Brillouin-zone integrations Monkhorst, Hendrik J.; Pack, James D. Physical Review B, Vol. 13, Issue 12, p. 5188-5192 https://doi.org/10.1103/PhysRevB.13.5188	journal	June 1976
Theory of polarization enhancement in epitaxial BaTiO3/SrTiO3 superlattices Neaton, J. B.; Rabe, K. M. Applied Physics Letters, Vol. 82, Issue 10 https://doi.org/10.1063/1.1559651	journal	March 2003
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
High-frequency near-field microscopy Rosner, Björn T.; van der Weide, Daniel W. Review of Scientific Instruments, Vol. 73, Issue 7 https://doi.org/10.1063/1.1482150	journal	July 2002
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium Kresse, G.; Hafner, J. Physical Review B, Vol. 49, Issue 20, p. 14251-14269 https://doi.org/10.1103/PhysRevB.49.14251	journal	May 1994
Epitaxial oxide thin films on Si(001) Yu, Z.; Ramdani, J.; Curless, J. A. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 4 https://doi.org/10.1116/1.1303737	journal	January 2000
Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging Yang, Yongliang; Lai, Keji; Tang, Qiaochu Journal of Micromechanics and Microengineering, Vol. 22, Issue 11 https://doi.org/10.1088/0960-1317/22/11/115040	journal	October 2012
Epitaxial growth and strain relaxation of BaTiO[sub 3] thin films on SrTiO[sub 3] buffered (001) Si by molecular beam epitaxy Niu, F.; Wessels, B. W. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 3 https://doi.org/10.1116/1.2539503	journal	January 2007
Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide McKee, R. A. Science, Vol. 293, Issue 5529 https://doi.org/10.1126/science.293.5529.468	journal	July 2001
A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors McDaniel, Martin D.; Ngo, Thong Q.; Posadas, Agham Advanced Materials Interfaces, Vol. 1, Issue 8 https://doi.org/10.1002/admi.201400081	journal	May 2014
Atomic and electronic structure of the ferroelectric BaTiO ₃ /Ge(001) interface Fredrickson, Kurt D.; Ponath, Patrick; Posadas, Agham B. Applied Physics Letters, Vol. 104, Issue 24 https://doi.org/10.1063/1.4883883	journal	June 2014
Heteroepitaxial growth of BaTiO ₃ films on Si by pulsed laser deposition Lee, Myung‐Bok; Kawasaki, Masashi; Yoshimoto, Mamoru Applied Physics Letters, Vol. 66, Issue 11 https://doi.org/10.1063/1.113232	journal	March 1995
Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance Paleari, S.; Baldovino, S.; Molle, A. Physical Review Letters, Vol. 110, Issue 20 https://doi.org/10.1103/PhysRevLett.110.206101	journal	May 2013
Nanoscale microwave microscopy using shielded cantilever probes Lai, Keji; Kundhikanjana, Worasom; Kelly, Michael A. Applied Nanoscience, Vol. 1, Issue 1 https://doi.org/10.1007/s13204-011-0002-7	journal	April 2011
c-axis oriented epitaxial BaTiO3 films on (001) Si Vaithyanathan, V.; Lettieri, J.; Tian, W. Journal of Applied Physics, Vol. 100, Issue 2 https://doi.org/10.1063/1.2203208	journal	July 2006
$n$ -Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level Scappucci, G.; Warschkow, O.; Capellini, G. Physical Review Letters, Vol. 109, Issue 7 https://doi.org/10.1103/PhysRevLett.109.076101	journal	August 2012
Hysteretic electrical transport in BaTiO ₃ /Ba ₁₋ _x Sr _x TiO ₃ /Ge heterostructures Ngai, J. H.; Kumah, D. P.; Ahn, C. H. Applied Physics Letters, Vol. 104, Issue 6 https://doi.org/10.1063/1.4864648	journal	February 2014
Self-interaction correction to density-functional approximations for many-electron systems Perdew, J. P.; Zunger, Alex Physical Review B, Vol. 23, Issue 10, p. 5048-5079 https://doi.org/10.1103/PhysRevB.23.5048	journal	May 1981
The surface science of titanium dioxide Diebold, Ulrike Surface Science Reports, Vol. 48, Issue 5-8 https://doi.org/10.1016/S0167-5729(02)00100-0	journal	January 2003
Properties of epitaxial BaTiO ₃ deposited on GaAs Contreras-Guerrero, R.; Veazey, J. P.; Levy, J. Applied Physics Letters, Vol. 102, Issue 1 https://doi.org/10.1063/1.4773988	journal	January 2013
Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope Lai, K.; Kundhikanjana, W.; Kelly, M. Review of Scientific Instruments, Vol. 79, Issue 6 https://doi.org/10.1063/1.2949109	journal	June 2008
Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties Lin, A.; Hong, X.; Wood, V. Applied Physics Letters, Vol. 78, Issue 14 https://doi.org/10.1063/1.1358848	journal	April 2001
Ge based high performance nanoscale MOSFETs Saraswat, Krishna C.; Chui, Chi On; Krishnamohan, Tejas Microelectronic Engineering, Vol. 80 https://doi.org/10.1016/j.mee.2005.04.038	journal	June 2005
Scanning Near-Field Microwave Microscopy of VO ₂ and Chemical Vapor Deposition Graphene Tselev, Alexander; Lavrik, Nickolay V.; Kolmakov, Andrei Advanced Functional Materials, Vol. 23, Issue 20 https://doi.org/10.1002/adfm.201203435	journal	April 2013
Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy Huang, W.; Wu, Z. P.; Hao, J. H. Applied Physics Letters, Vol. 94, Issue 3 https://doi.org/10.1063/1.3075955	journal	January 2009
Preparation of a clean Ge(001) surface using oxygen plasma cleaning Ponath, Patrick; Posadas, Agham B.; Hatch, Richard C. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3 https://doi.org/10.1116/1.4798390	journal	May 2013
Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors Ito, Daisuke; Fujimura, Norifumi; Yoshimura, Takeshi Journal of Applied Physics, Vol. 93, Issue 9 https://doi.org/10.1063/1.1564862	journal	May 2003
Wetting at the BaTiO ₃ /Pt interface Fredrickson, Kurt D.; Posadas, Agham B.; Demkov, Alexander A. Journal of Applied Physics, Vol. 113, Issue 18 https://doi.org/10.1063/1.4803705	journal	May 2013
Switching spectroscopy piezoresponse force microscopy of ferroelectric materials Jesse, Stephen; Baddorf, Arthur P.; Kalinin, Sergei V. Applied Physics Letters, Vol. 88, Issue 6 https://doi.org/10.1063/1.2172216	journal	February 2006
Quantitative complex electrical impedance microscopy by scanning evanescent microwave microscope Xiang, X. -D.; Gao, C. Materials Characterization, Vol. 48, Issue 2-3 https://doi.org/10.1016/S1044-5803(02)00277-2	journal	April 2002
Ab initiomolecular dynamics for liquid metals Kresse, G.; Hafner, J. Physical Review B, Vol. 47, Issue 1, p. 558-561 https://doi.org/10.1103/PhysRevB.47.558	journal	January 1993
Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets Chen, Ruyi; Cui, Qirui; Liao, Liyang Nature Communications, Vol. 12, Issue 1 https://doi.org/10.1038/s41467-021-23414-3	journal	May 2021
High-resolution X-ray luminescence extension imaging Ou, Xiangyu; Qin, Xian; Huang, Bolong Nature, Vol. 590, Issue 7846 https://doi.org/10.1038/s41586-021-03251-6	journal	February 2021
Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect Tatemizo, Nobuyuki; Imada, Saki; Okahara, Kizuna Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-58835-5	journal	February 2020
Epitaxial growth of Pb(Zr(0.2)Ti(0.8))O3 on Si and its nanoscale piezoelectric properties Lin, A.; Hong, X.; Wood, V. 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) https://doi.org/10.1109/isdrs.2001.984519	conference	January 2001

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van der Waals epitaxy of highly (111)-oriented BaTiO ₃ on MXene Bennett-Jackson, Andrew L.; Falmbigl, Matthias; Hantanasirisakul, Kanit Nanoscale, Vol. 11, Issue 2 https://doi.org/10.1039/c8nr07140c	journal	January 2019
Integration of BaTiO ₃ /CoFe ₂ O ₄ multiferroic heterostructure on GaN semiconductor Li, Guanjie; Li, Xiaomin; Zhu, Qiuxiang CrystEngComm, Vol. 21, Issue 43 https://doi.org/10.1039/c9ce00932a	journal	January 2019
Heteroepitaxy of perovskite (111) SrTiO ₃ on wurtzite (0002) GaN using an artificial interface lattice design Li, Guanjie; Li, Xiaomin; Zhao, Junliang CrystEngComm, Vol. 21, Issue 45 https://doi.org/10.1039/c9ce01418g	journal	January 2019
Polarization retention in ultra-thin barium titanate films on Ge(001) Cho, Yujin; Ponath, Patrick; Zheng, Lu Applied Physics Letters, Vol. 112, Issue 16 https://doi.org/10.1063/1.5020549	journal	April 2018
Crystalline SrZrO ₃ deposition on Ge (001) by atomic layer deposition for high- k dielectric applications Hu, Shen; Ji, Li; Chen, Pei-Yu Journal of Applied Physics, Vol. 124, Issue 4 https://doi.org/10.1063/1.5026790	journal	July 2018
Effect of SrTiO ₃ oxygen vacancies on the conductivity of LaTiO ₃ /SrTiO ₃ heterostructures Edmondson, Bryce I.; Liu, Shuhaog; Lu, Sirong Journal of Applied Physics, Vol. 124, Issue 18 https://doi.org/10.1063/1.5046081	journal	November 2018
Strain-dependence of χ(2) in thin film barium strontium titanate Foster, Natalie D.; Edmondson, Bryce I.; Ekerdt, John G. AIP Advances, Vol. 9, Issue 2 https://doi.org/10.1063/1.5055731	journal	February 2019
Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications Lin, Edward L.; Posadas, Agham B.; Zheng, Lu Journal of Applied Physics, Vol. 126, Issue 6 https://doi.org/10.1063/1.5087571	journal	August 2019
A review of molecular beam epitaxy of ferroelectric BaTiO ₃ films on Si, Ge and GaAs substrates and their applications Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V. Science and Technology of Advanced Materials, Vol. 16, Issue 3 https://doi.org/10.1088/1468-6996/16/3/036005	journal	June 2015
Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM Lei, Le; Xu, Rui; Ye, Shili Journal of Physics Communications, Vol. 2, Issue 2 https://doi.org/10.1088/2399-6528/aaa85f	journal	February 2018
Contradictory nature of Co doping in ferroelectric $BaTi O_{3}$ Ponath, Patrick; O’Hara, Andrew; Cao, Hai-Xia Physical Review B, Vol. 94, Issue 20 https://doi.org/10.1103/physrevb.94.205121	journal	November 2016
Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition Edmondson, Bryce I.; Kwon, Sunah; Lam, Chon H. Journal of the American Ceramic Society, Vol. 103, Issue 2 https://doi.org/10.1111/jace.16815	journal	September 2019
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