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Title: Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

Journal Article · · Nano Letters
DOI:https://doi.org/10.1021/nl5038177· OSTI ID:1185466
 [1];  [1];  [2];  [1];  [1];  [1];  [3];  [3];  [1];  [2];  [4]
  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Univ. of North Carolina, Charlotte Hill, NC (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. North Carolina State University

Semiconductor heterostructures provide a powerful platform to engineer the dynamics of excitons for fundamental and applied interests. However, the functionality of conventional semiconductor heterostructures is often limited by inefficient charge transfer across interfaces due to the interfacial imperfection caused by lattice mismatch. Here we demonstrate that MoS2/WS2 heterostructures consisting of monolayer MoS2 and WS2 stacked in the vertical direction can enable equally efficient interlayer exciton relaxation regardless the epitaxy and orientation of the stacking. This is manifested by a similar 2 orders of magnitude decrease of photoluminescence intensity in both epitaxial and nonepitaxial MoS2/WS2 heterostructures. Both heterostructures also show similarly improved absorption beyond the simple superimposition of the absorptions of monolayer MoS2 and WS2. Our result indicates that 2D heterostructures bear significant implications for the development of photonic devices, in particular those requesting efficient exciton separation and strong light absorption, such as solar cells, photodetectors, modulators, and photocatalysts. Furthermore, it also suggests that the simple stacking of dissimilar 2D materials with random orientations is a viable strategy to fabricate complex functional 2D heterostructures, which would show similar optical functionality as the counterpart with perfect epitaxy.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1185466
Alternate ID(s):
OSTI ID: 1329124
Journal Information:
Nano Letters, Vol. 15; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 318 works
Citation information provided by
Web of Science

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Synthesis of transition metal dichalcogenides and their heterostructures journal August 2018
A roadmap for electronic grade 2D materials journal January 2019
Interlayer screening effects in WS 2 /WSe 2 van der Waals hetero-bilayer journal August 2018
The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures journal May 2016
Approaching the nearly perfect and wavelength-adjustable absorption of MoS 2 monolayer using defective quasi photonic crystals journal January 2020
Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics journal January 2017
Novel Optoelectronic Devices: Transition-Metal-Dichalcogenide-Based 2D Heterostructures journal January 2018
High Mobility WS 2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors journal October 2017
Integration of bulk materials with two-dimensional materials for physical coupling and applications journal May 2019
Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions journal December 2017
Atomic layer deposition for nonconventional nanomaterials and their applications journal November 2019
Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution‐Phase Deposition journal April 2018
Interlayer Coupling Induced Infrared Response in WS 2 /MoS 2 Heterostructures Enhanced by Surface Plasmon Resonance journal April 2018
Controlled sulfurization of DC sputtered Mo and W thin films for CVD growth of MoS 2 /WS 2 heterostructures journal July 2018
Interlayer valley excitons in heterobilayers of transition metal dichalcogenides journal August 2018
Observation of interlayer phonon modes in van der Waals heterostructures journal April 2015
High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe 2 /MoS 2 journal May 2016
Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures journal September 2018
Recent Advances in Synthesis and Applications of 2D Junctions journal August 2018
Biaxial strain tuning of interlayer excitons in bilayer MoS 2 journal October 2019
Tunable electronic and optical properties of the WS 2 /IGZO heterostructure via an external electric field and strain: a theoretical study journal January 2019
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Optical absorption by indirect excitons in a transition metal dichalcogenide/hexagonal boron nitride heterostructure journal May 2018
Interface Characterization and Control of 2D Materials and Heterostructures journal July 2018
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Tuning interlayer coupling by laser irradiation and broadband photodetection in vertical MoTe 2 /WS 2 vdW heterostructure journal April 2019
One-Step CVD Synthesis of Few-Layer SnS 2 /MoS 2 Vertical Heterostructures journal October 2019
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Correlated fluorescence blinking in two-dimensional semiconductor heterostructures journal December 2016
Observation of Strong Interlayer Coupling in MoS 2 /WS 2 Heterostructures journal December 2015
Interlayer interactions in 2D WS 2 /MoS 2 heterostructures monolithically grown by in situ physical vapor deposition journal January 2018
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