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Title: Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.
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Publication Date:
OSTI Identifier:
Report Number(s):
48341; 47862
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films, 33(2):021516
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
Environmental Molecular Sciences Laboratory