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Title: Modeling electron emission and surface effects from diamond cathodes

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4907393· OSTI ID:1183839
 [1];  [1];  [1];  [2];  [2];  [2];  [2]
  1. Tech-X Corporation, Boulder, CO (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)

We developed modeling capabilities, within the Vorpal particle-in-cell code, for three-dimensional (3D) simulations of surface effects and electron emission from semiconductor photocathodes. They include calculation of emission probabilities using general, piece-wise continuous, space-time dependent surface potentials, effective mass and band bending field effects. We applied these models, in combination with previously implemented capabilities for modeling charge generation and transport in diamond, to investigate the emission dependence on applied electric field in the range from approximately 2 MV/m to 17 MV/m along the [100] direction. The simulation results were compared to experimental data. For the considered parameter regime, conservation of transverse electron momentum (in the plane of the emission surface) allows direct emission from only two (parallel to [100]) of the six equivalent lowest conduction band valleys. When the electron affinity χ is the only parameter varied in the simulations, the value χ = 0.31 eV leads to overall qualitative agreement with the probability of emission deduced from experiments. Including band bending in the simulations improves the agreement with the experimental data, particularly at low applied fields, but not significantly. In this study, using surface potentials with different profiles further allows us to investigate the emission as a function of potential barrier height, width, and vacuum level position. However, adding surface patches with different levels of hydrogenation, modeled with position-dependent electron affinity, leads to the closest agreement with the experimental data.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Nuclear Physics (NP)
Grant/Contract Number:
SC00112704; SC0006246; SC0007577
OSTI ID:
1183839
Alternate ID(s):
OSTI ID: 1228522
Report Number(s):
BNL-107899-2015-JA; JAPIAU; R&D Project: KBCH139; KB0202011; TRN: US1500516
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 5; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

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Cited By (7)

Enhancing secondary yield of a diamond amplifier using a nitrogen layer journal June 2015
A photoemission moments model using density functional and transfer matrix methods applied to coating layers on surfaces: Theory journal January 2018
Analytical models of transmission probabilities for electron sources journal February 2018
Modeling of diamond field emitter arrays for a compact source of high brightness electron beams journal April 2019
Theory of electron transport and emission from a semiconductor nanotip journal June 2019
Thermal-field and photoemission from meso- and micro-scale features: Effects of screening and roughness on characterization and simulation journal June 2019
Theory of electron transport and emission from a semiconductor nanotip text January 2019

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