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Title: Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices

In our paper, we demonstrate the growth of ordered arrays of nonpolar {101 ¯ 0} core–shell nanowalls and semipolar {101 ¯ 1} core–shell pyramidal nanostripes on c-plane (0001) sapphire substrates using selective-area epitaxy and metal organic chemical vapor deposition. The nanostructure arrays are controllably patterned into LED mesa regions, demonstrating a technique to impart secondary lithography features into the arrays. Moreover, we study the dependence of the nanostructure cores on the epitaxial growth conditions and show that the geometry and morphology are strongly influenced by growth temperature, V/III ratio, and pulse interruption time. We also demonstrate the growth of InGaN quantum well shells on the nanostructures and characterize the structures by using micro-photoluminescence and cross-section scanning tunneling electron microscopy.
 [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [1] ;  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 1543-186X; 536917
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Electronic Materials (Online)
Additional Journal Information:
Journal Name: Journal of Electronic Materials (Online); Journal Volume: 44; Journal Issue: 5; Journal ID: ISSN 1543-186X
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
National Science Foundation (NSF), Arlington, VA (United States)
Country of Publication:
United States
77 NANOSCIENCE AND NANOTECHNOLOGY gallium nitride; nonpolar; semipolar; nanostructures; selective area epitaxy; nanowalls; pyramidal nanostripes; LED; MOCVD