Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices

Rishinaramangalam, Ashwin K.; Mishkat Ul Masabih, Saadat; Fairchild, Michael N.; Wright, Jeremy Benjamin; Shima, Darryl M.; Balakrishnan, Ganesh; Brener, Igal; Brueck, Steven R.J.; Feezell, Daniel F.

doi:10.1007/s11664-014-3456-z

Title: Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices

Journal Article · Tue Oct 21 00:00:00 EDT 2014 · Journal of Electronic Materials (Online)

DOI:https://doi.org/10.1007/s11664-014-3456-z· OSTI ID:1183096

Rishinaramangalam, Ashwin K. ^[1]; Mishkat Ul Masabih, Saadat ^[2]; Fairchild, Michael N. ^[1]; Wright, Jeremy Benjamin ^[1]; Shima, Darryl M. ^[1]; Balakrishnan, Ganesh ^[1]; Brener, Igal ^[3]; Brueck, Steven R.J. ^[1]; Feezell, Daniel F. ^[1]

Univ. of New Mexico, Albuquerque, NM (United States)
Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In our paper, we demonstrate the growth of ordered arrays of nonpolar {101 ¯ 0} core–shell nanowalls and semipolar {101 ¯ 1} core–shell pyramidal nanostripes on c-plane (0001) sapphire substrates using selective-area epitaxy and metal organic chemical vapor deposition. The nanostructure arrays are controllably patterned into LED mesa regions, demonstrating a technique to impart secondary lithography features into the arrays. Moreover, we study the dependence of the nanostructure cores on the epitaxial growth conditions and show that the geometry and morphology are strongly influenced by growth temperature, V/III ratio, and pulse interruption time. We also demonstrate the growth of InGaN quantum well shells on the nanostructures and characterize the structures by using micro-photoluminescence and cross-section scanning tunneling electron microscopy.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: National Science Foundation (NSF), Arlington, VA (United States)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1183096

Report Number(s):: SAND2014-16968J; 536917

Journal Information:: Journal of Electronic Materials (Online), Vol. 44, Issue 5; ISSN 1543-186X

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices Hartmann, Jana; Manglano Clavero, Irene; Nicolai, Lars physica status solidi (b), Vol. 256, Issue 4 https://doi.org/10.1002/pssb.201800477	journal	December 2018
Diamagnetic susceptibility and optical properties of a spherical quantum dot: effects of the parabolic and the shifted parabolic potentials Tshipa, Moletlanyi Optical and Quantum Electronics, Vol. 51, Issue 7 https://doi.org/10.1007/s11082-019-1942-5	journal	June 2019
Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar $(10\bar{1}1)$ core-shell triangular nanostripe GaN/InGaN LEDs Okur, Serdal; Rishinaramangalam, Ashwin K.; Mishkat-Ul-Masabih, Saadat Nanotechnology, Vol. 29, Issue 23 https://doi.org/10.1088/1361-6528/aab82e	journal	April 2018
AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics Liu, Xianhe; Mashooq, Kishwar; Laleyan, David A. Photonics Research, Vol. 7, Issue 6 https://doi.org/10.1364/prj.7.000b12	journal	January 2019
3D GaN Fins as a Versatile Platform for a-Plane-Based Devices Hartmann, Jana; Manglano Clavero, Irene; Nicolai, Lars Wiley https://doi.org/10.24355/dbbs.084-201912181303-0	text	January 2018
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Title: Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices

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