Layer Disordering and Doping Compensation of an Intersubband AlGaN/AlN Superlattice by Silicon Implantation.

Journal Article · Fri Aug 01 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896783· OSTI ID:1183076

Wierer, Jonathan; Allerman, Andrew A.; Skogen, Erik J.; Tauke-Pedretti, Anna; Alford, Charles; Vawter, Gregory A.; Montano, Ines

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1183076
• Report Number(s): SAND2014-16651J; 534549
• Journal Information: Applied Physics Letters, Vol. 105, Issue 13; ISSN 0003--6951
• Country of Publication: United States
• Language: English