Conduction at a ferroelectric interface

Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; Han, Myung -Geun; Chen, Hanghui; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

doi:10.1103/PhysRevApplied.2.051001

Title: Conduction at a ferroelectric interface

Journal Article · Wed Nov 05 00:00:00 EST 2014 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.2.051001· OSTI ID:1182478

Marshall, Matthew S. J. ^[1]; Malashevich, Andrei ^[1]; Disa, Ankit S. ^[1]; Han, Myung -Geun ^[2]; Chen, Hanghui ^[1]; Zhu, Yimei ^[2]; Ismail-Beigi, Sohrab ^[1]; Walker, Frederick J. ^[1]; Ahn, Charles H. ^[1]

Yale Univ., New Haven, CT (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704; AC02-98CH10886

OSTI ID:: 1182478

Alternate ID(s):: OSTI ID: 1181416

Report Number(s):: BNL-107264-2014-JA; PRAHB2; R&D Project: MA015MACA; KC0201010

Journal Information:: Physical Review Applied, Vol. 2, Issue 5; ISSN 2331-7019

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 38 works

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