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Title: Plasma processing of large curved surfaces for superconducting rf cavity modification

Journal Article · · Physical Review Special Topics. Accelerators and Beams

In this study, plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl2/Ar plasma etching has to address several crucial parameters which influence the etching rate and surface roughness, and eventually, determine cavity performance. This includes dependence of the process on the frequency of the RF generator, gas pressure, power level, the driven (inner) electrode configuration, and the chlorine concentration in the gas mixture during plasma processing. To demonstrate surface layer removal in the asymmetric non-planar geometry, we are using a simple cylindrical cavity with 8 ports symmetrically distributed over the cylinder. The ports are used for diagnosing the plasma parameters and as holders for the samples to be etched. The etching rate is highly correlated with the shape of the inner electrode, radio-frequency (RF) circuit elements, chlorine concentration in the Cl2/Ar gas mixtures, residence time of reactive species and temperature of the cavity. Using cylindrical electrodes with variable radius, large-surface ring-shaped samples and d.c. bias implementation in the external circuit we have demonstrated substantial average etching rates and outlined the possibility to optimize plasma properties with respect to maximum surface processing effect.

Research Organization:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
SC0007879; AC05-06OR23177
OSTI ID:
1181258
Alternate ID(s):
OSTI ID: 1165422
Report Number(s):
JLAB-ACC-14-1903; DOE/OR/23177-3118; PRABFM; 122001
Journal Information:
Physical Review Special Topics. Accelerators and Beams, Journal Name: Physical Review Special Topics. Accelerators and Beams Vol. 17 Journal Issue: 12; ISSN 1098-4402
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

References (13)

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Positive‐ion bombardment of substrates in rf diode glow discharge sputtering journal December 1972
Principles of Plasma Discharges and Materials Processing book January 2005
Application of RF Discharges to Sputtering journal March 1970
Plasma potentials of 13.56‐MHz rf argon glow discharges in a planar system journal January 1985
High etching rates of bulk Nb in Ar/Cl2 microwave discharge
  • Rašković, M.; Popović, S.; Upadhyay, J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 2 https://doi.org/10.1116/1.3077298
journal March 2009
Plasma treatment of bulk niobium surface for superconducting rf cavities: Optimization of the experimental conditions on flat samples journal November 2010
Bias voltage in finite length, cylindrical and coaxial radio‐frequency discharges journal May 1990
Rf sputtering–voltage division between two electrodes journal January 1983
Heating Effects in Reactive Etching of Nb and Nb2 O 5 journal September 1984
The Loading Effect in Plasma Etching journal August 1977

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