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Title: Stabilization and Band-Gap Tuning of the 1T-MoS 2 Monolayer by Covalent Functionalization

Journal Article · · Chemistry of Materials
 [1];  [1]
  1. Department of Chemistry, University of California, Riverside, California 92521, United States

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1179748
Journal Information:
Chemistry of Materials, Journal Name: Chemistry of Materials Vol. 27 Journal Issue: 10; ISSN 0897-4756
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 228 works
Citation information provided by
Web of Science

References (49)

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How Good Can Monolayer MoS 2 Transistors Be? journal September 2011
MoS 2 Nanoplates Consisting of Disordered Graphene-like Layers for High Rate Lithium Battery Anode Materials journal November 2011
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials journal February 2011
A phase transition glides into view journal April 2014
Band structure engineering of monolayer MoS 2 by surface ligand functionalization for enhanced photoelectrochemical hydrogen production activity journal January 2014
Highly Effective Visible-Light-Induced H 2 Generation by Single-Layer 1T-MoS 2 and a Nanocomposite of Few-Layer 2H-MoS 2 with Heavily Nitrogenated Graphene journal November 2013
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van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates journal May 2012
New Route for Stabilization of 1T-WS 2 and MoS 2 Phases journal November 2011
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Few-Layer MoS 2 : A Promising Layered Semiconductor journal April 2014
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Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering journal November 2014
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Single-layer MoS2 transistors journal January 2011
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Microwave Near-Field Imaging of Two-Dimensional Semiconductors journal January 2015

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