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Title: Frenkel-like Wannier-Mott excitons in few-layer Pb I 2

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
 [1];  [1];  [1];  [2];  [1];  [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Inst. of Chemical Technology Prague (Czech Republic)

Optical measurements and first-principles calculations of the band structure and exciton states in direct-gap bulk and few-layer PbI2 indicate that the n = 1 exciton is Frenkel-like in nature in that its energy exhibits a weak dependence on thickness down to atomic-length scales. Results reveal large increases in the gap and exciton binding energy with a decreasing number of layers and a transition of the fundamental gap, which becomes indirect for one and two monolayers. Calculated values are in reasonable agreement with a particle-in-a-box model relying on the Wannier-Mott theory of exciton formation. In conclusion, general arguments and existing data suggest that the Frenkel-like character of the lowest exciton is a universal feature of wide-gap layered semiconductors whose effective masses and dielectric constants give bulk Bohr radii that are on the order of the layer spacing.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
Grant/Contract Number:
SC0000957; AC02-05CH11231; DMR-1254314
OSTI ID:
1370080
Alternate ID(s):
OSTI ID: 1178611
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 91, Issue 16; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 1098-0121
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 58 works
Citation information provided by
Web of Science

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Cited By (6)

Near-Infrared Photoresponse of One-Sided Abrupt MAPbI 3 /TiO 2 Heterojunction through a Tunneling Process journal October 2016
Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals journal March 2019
Anisotropic temperature-dependence of optical phonons in layered PbI 2 journal February 2018
Low Threshold Fabry-Pérot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets journal July 2018
Monitoring the electronic, thermal and optical properties of two-dimensional MoO 2 under strain via vibrational spectroscopies: a first-principles investigation journal January 2019
Perseverance of direct bandgap in multilayer 2D PbI 2 under an experimental strain up to 7.69% journal February 2019

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