Diamondoid monolayers as electron emitters

Yang, Wanli; Fabbri, Jason D.; Melosh, Nicholas A.; Hussain, Zahid; Shen, Zhi-Xun

Title: Diamondoid monolayers as electron emitters

Patent · Tue Oct 29 00:00:00 EDT 2013

OSTI ID:1176535

Yang, Wanli; Fabbri, Jason D.; Melosh, Nicholas A.; Hussain, Zahid; Shen, Zhi-Xun

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-76SF-00515

Assignee:: The Board of Trustees of the Leland Stanford Junior University

Patent Number(s):: 8,569,941

Application Number:: 13/442,563

OSTI ID:: 1176535

Resource Relation:: Patent File Date: 2012 Apr 09

Country of Publication:: United States

Language:: English

References (18)

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