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Title: Light emitting diode package element with internal meniscus for bubble free lens placement

Patent ·
OSTI ID:1176415

A method for fabricating a light emitting diode (LED) package comprising providing an LED chip and covering at least part of the LED chip with a liquid encapsulant having a radius of curvature. An optical element is provided having a bottom surface with at least a portion having a radius of curvature larger than the liquid encapsulant. The larger radius of curvature portion of the optical element is brought into contact with the liquid encapsulant. The optical element is then moved closer to the LED chip, growing the contact area between said optical element and said liquid encapsulant. The liquid encapsulant is then cured. A light emitting diode comprising a substrate with an LED chip mounted to it. A meniscus ring is on the substrate around the LED chip with the meniscus ring having a meniscus holding feature. An inner encapsulant is provided over the LED chip with the inner encapsulant having a contacting surface on the substrate, with the meniscus holding feature which defines the edge of the contacting surface. An optical element is included having a bottom surface with at least a portion that is concave. The optical element is arranged on the substrate with the concave portion over the LED chip. A contacting encapsulant is included between the inner encapsulant and optical element.

Research Organization:
Cree, Inc., Goleta, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC26-05NT42340
Assignee:
Cree, Inc. (Goleta, CA)
Patent Number(s):
7,804,147
Application Number:
11/496,918
OSTI ID:
1176415
Resource Relation:
Patent File Date: 2006 Jul 31
Country of Publication:
United States
Language:
English

References (5)

Experimental investigation of dependence of electrical characteristics on device parameters in trench MOS barrier Schottky diodes
  • Sakai, T.; Matsumoto, S.; Yachi, T.
  • International Symposium on Power Semiconductor Devices and IC's, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) https://doi.org/10.1109/ISPSD.1998.702691
conference January 1998
Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup journal April 2005
New UV Light Emitter Based on AlGaN Heterostructures with Graded Electron and Hole Injectors journal January 2002
Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs journal February 2000
Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers journal January 2005

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