High-efficiency neutron detectors and methods of making same
Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as 10B or 6LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.
- Research Organization:
- Univ. of Michigan, Ann Arbor, MI (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- The Regents of the University of Michigan (Ann Arbor, MI)
- Patent Number(s):
- 7,164,138
- Application Number:
- 10/695,019
- OSTI ID:
- 1176074
- Resource Relation:
- Patent File Date: 2003 Oct 29
- Country of Publication:
- United States
- Language:
- English
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