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Title: Strong Room-temperature Negative Transconductance In An Axial Si/Ge Hetero-nanowire Tunneling Field-effect Transistor

We report on room-temperature negative transconductance (NTC) in axial Si/Ge hetero-nanowire tunneling field-effect transistors (TFETs). The NTC produces a current peak-to-valley ratio > 45, a high value for a Si-based device. We characterize the NTC characteristics over a range of gate VG and drain VD voltages, finding that NTC persists down to VD = –50 mV. The physical mechanism responsible for the NTC is the VG-induced depletion in the p-Ge section that eventually reduces the maximum electric field that triggers the tunneling ID, as confirmed via three-dimensional TCAD simulations.
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Publication Date:
OSTI Identifier:
Report Number(s):
47607; KP1704020
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters, 105(6):Article No. 062106
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
Environmental Molecular Sciences Laboratory