Structural and Electrical Properties of ([SnSe][subscript 1+delta])[subscript m](NbSe[subscript 2])[subscript 1] Compounds: Single NbSe[subscript 2] Layers Separated by Increasing Thickness of SnSe
- Oregon
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- National Science Foundation (NSF)
- OSTI ID:
- 1170028
- Journal Information:
- Chem. Mater., Vol. 27, Issue (3) ; 02, 2015
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Structure, stability, and properties of the intergrowth compounds ([SnSe]₁₊δ)m(NbSe₂)n, where m = n = 1-20
Influence of Nanoarchitecture on Charge Donation and the Electrical-Transport Properties in [(SnSe)[subscript 1+delta]][TiSe[subscript 2]][subscript q] Heterostructures
Synthesis and Characterization of Quaternary Monolayer Thick MoSe[subscript 2]/SnSe/NbSe[subscript 2]/SnSe Heterojunction Superlattices
Journal Article
·
Fri Aug 28 00:00:00 EDT 2015
· Journal of the American Chemical Society
·
OSTI ID:1170028
+1 more
Influence of Nanoarchitecture on Charge Donation and the Electrical-Transport Properties in [(SnSe)[subscript 1+delta]][TiSe[subscript 2]][subscript q] Heterostructures
Journal Article
·
Fri Jul 17 00:00:00 EDT 2020
· Chem. Mater.
·
OSTI ID:1170028
+5 more
Synthesis and Characterization of Quaternary Monolayer Thick MoSe[subscript 2]/SnSe/NbSe[subscript 2]/SnSe Heterojunction Superlattices
Journal Article
·
Thu Sep 24 00:00:00 EDT 2015
· Chem. Mater.
·
OSTI ID:1170028
+2 more