Observation of cyclotron resonance and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu0.02Bi2Se3
- Johns Hopkins Univ., Baltimore, MD (United States). The Inst. of Quantum Matter
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy
We have utilized magneto-optical time-domain spectroscopy to investigate the low frequency optical response of topological insulator Cu0.02Bi2Se3 and Bi2Se3 films. With both field and frequency depedence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both samples. The small amount of Cu substitution into the Cu0.02Bi2Se3 induces a true bulk insulator with only a single conduction channel with total sheet carrier density 4.9 x 1012/cm2 and mobility as large as 4000 cm2/V s. This is consistent with pure topological surface state (TSSs) conduction with a chemical potential 150 meV above the Dirac point. Hence, a true topological insulator with an insulating bulk is realized. The CR broadens at high fields, an e ect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis on the zero field data. In contrast to Cu0.02Bi2Se3, two charge channels were observed in normal Bi2Se3 films. We demonstrate a method to distinguish between the dominant TSSs and trivial bulk/2DEG states. The dominant channel exhibits a CR with a carrier density of ~2.0 x 1013/cm2 and mobility ~3200 cm2/V s, consistent with TSSs with a chemical potential ~350meV above the Dirac point.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1169666
- Report Number(s):
- LA-UR-15-20835
- Country of Publication:
- United States
- Language:
- English
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