Cu Migration in Polycrystalline CdTe Solar Cells

Conference · Wed Mar 12 00:00:00 EDT 2014

OSTI ID:1169664

Guo, Da ^[1]; Akis, Richard ^[1]; Brinkman, Daniel ^[1]; Sankin, Igor ^[2]; Fang, Tian ^[2]; Vasileska, Dragica ^[1]; Ringhofer, Christian ^[1]

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1. Arizona State University
2. First Solar

An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

• Research Organization: Arizona State Univ., Tempe, AZ (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Contributing Organization: Arizona State University
• DOE Contract Number: EE0006344
• OSTI ID: 1169664
• Report Number(s): DOE-ASU-0006344-5
• Resource Relation: Conference: 10th International Conference and Exhibition on Device Packaging, Scottsdale, AZ, 10-13 March 2014
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY