Lasing threshold control in two-dimensional photonic crystals with gain

Journal Article · Wed Jan 01 00:00:00 EST 2014 · Optics Express

DOI:https://doi.org/10.1364/OE.22.019242· OSTI ID:1166778

Droulias, Sotiris ^[1]; Fietz, Chris ^[2]; Zhang, Peng ^[2]; Koschny, Thomas ^[2]; Soukoulis, Costas M ^[2]

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1. Institute of Electronic Structure and Laser, FORTH
2. Ames Laboratory

We demonstrate how the lasing threshold of a two dimensional photonic crystal containing a four-level gain medium is modified, as a result of the interplay between the group velocity and the modal reflectivity at the interface between the cavity and the exterior. Depending on their relative strength and the optical density of states, we show how the lasing threshold may be dramatically altered inside a band or, most importantly, close to the band edge. The idea is realized via self-consistent calculations based on a finite-difference time-domain method. The simulations are in good agreement with theoretical predictions.

• Research Organization: Ames Lab., Ames, IA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC02-07CH11358
• OSTI ID: 1166778
• Report Number(s): IS-J 8462; OPEXFF
• Journal Information: Optics Express, Vol. 22, Issue 16; ISSN 1094-4087
• Publisher: The Optical Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE