Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

Conference · Mon Dec 01 00:00:00 EST 2014

OSTI ID:1166658

Stradins, P.; Essig, S.; Nemeth, W.; Lee, B. G.; Young, D.; Norman, A.; Liu, Y.; Luo, J. -W.; Warren, E.; Dameron, A.; LaSalvia, V.; Page, M.; Rohatgi, A.; Upadhyaya, A.; Rounsaville, B.; Ok, Y. -W.; Glunz, S.; Benick, J.; Feldmann, F.; Hermle, M.

We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1166658
• Report Number(s): NREL/CP-5J00-63259
• Resource Relation: Conference: To be presented at WCPEC-6: 6th World Conference on Photovoltaic Energy Conversion, 23-27 November 2014, Kyoto, Japan
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
PASSIVATED CONTACTS
TUNNELING OXIDE
SILICON SOLAR CELL
N-TYPE OXIDES
N+DOPED POLYSILICON
BORON
Solar Energy - Photovoltaics