Structural Basis of Temperature-Dependent Electrical Resistance of Evaporation-Deposited Amorphous GeSe film
Journal Article
·
· Scripta Materialia
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1162897
- Report Number(s):
- BNL-106843-2014-JA
- Journal Information:
- Scripta Materialia, Vol. 86; ISSN 1359-6462
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature dependence of the electrical resistance of amorphous bismuth films
Deposition-temperature dependence of structural anisotropy in amorphous Tb-Fe films
Composition and deposition temperature dependence of the structure of oxidized thin-film amorphous Tb-Fe
Journal Article
·
Wed Oct 01 00:00:00 EDT 1980
· Sov. J. Low Temp. Phys. (Engl. Transl.); (United States)
·
OSTI ID:1162897
Deposition-temperature dependence of structural anisotropy in amorphous Tb-Fe films
Journal Article
·
Tue Feb 01 00:00:00 EST 1994
· Physical Review, B: Condensed Matter; (United States)
·
OSTI ID:1162897
+1 more
Composition and deposition temperature dependence of the structure of oxidized thin-film amorphous Tb-Fe
Journal Article
·
Sat Apr 01 00:00:00 EST 1989
· J. Appl. Phys.; (United States)
·
OSTI ID:1162897
+3 more