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Title: Thermoelectric power factor enhancement with gate-all-around silicon nanowires

Journal Article · · Physical Review
DOI:https://doi.org/10.1063/1.4870962· OSTI ID:1161127

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
SC0001009
OSTI ID:
1161127
Journal Information:
Physical Review, Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory
Country of Publication:
United States
Language:
English

References (47)

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K journal March 2013
Enhanced thermoelectric performance of rough silicon nanowires journal January 2008
Silicon nanowires as efficient thermoelectric materials journal January 2008
Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices journal February 2012
Modeling and theoretical efficiency of a silicon nanowire based thermoelectric junction with area enhancement journal June 2012
Fabrication and Characterization of a Nanowire/Polymer-Based Nanocomposite for a Prototype Thermoelectric Device journal June 2004
Lower limit to the thermal conductivity of disordered crystals journal September 1992
Effect of quantum-well structures on the thermoelectric figure of merit journal May 1993
Resonant carrier scattering by core-shell nanoparticles for thermoelectric power factor enhancement journal January 2012
Convergence of electronic bands for high performance bulk thermoelectrics journal May 2011
Thermionic power generation at high temperatures using SiGe∕Si superlattices journal March 2007
Effect of Nanoparticles on Electron and Thermoelectric Transport journal January 2009
Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites journal January 2012
Power Factor Enhancement by Modulation Doping in Bulk Nanocomposites journal June 2011
Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires journal February 2013
Thermoelectric properties of ultrathin silicon nanowires journal September 2012
Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires journal August 2013
Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors journal December 2011
Quantum-mechanical effects in trigate SOI MOSFETs journal May 2006
Low-temperature electron mobility in Trigate SOI MOSFETs journal February 2006
Electric-field-effect thermoelectrics journal September 2001
Thermoelectric properties of electrically gated bismuth telluride nanowires journal February 2010
Quantitative Determination of Contributions to the Thermoelectric Power Factor in Si Nanostructures journal December 2010
Field-Effect Modulation of Thermoelectric Properties in Multigated Silicon Nanowires journal October 2013
Phonon heat conduction in a semiconductor nanowire journal March 2001
Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering journal September 2008
Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires journal June 2011
Calculated thermoelectric properties of In x Ga 1−x N, In x Al 1−x N, and Al x Ga 1−x N journal May 2013
Thermoelectric figure of merit of ( In 0.53 Ga 0.47 As ) 0.8 ( In 0.52 Al 0.48 As ) 0.2 III-V semiconductor alloys journal June 2010
Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation journal January 2008
Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity journal October 2007
Surface roughness scattering model for arbitrarily oriented silicon nanowires journal October 2011
Monte Carlo study of electron transport in silicon inversion layers journal July 1993
Phase-shift calculation of electron mobility in n -type silicon at low temperatures journal August 1981
Effect of the electron-plasmon interaction on the electron mobility in silicon journal September 1991
Temperature and size dependences of electrostatics and mobility in gate-all-around MOSFET devices journal December 2010
Assessment of room-temperature phonon-limited mobility in gated silicon nanowires journal June 2004
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers journal November 1993
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation journal August 2008
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials journal July 1983
The Theory of Electronic Semi-Conductors journal October 1931
Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal–oxide–semiconductor technology journal September 2012
Nanostructured Bulk Silicon as an Effective Thermoelectric Material journal August 2009
Thermoelectric characterization of Si thin films in silicon-on-insulator wafers journal September 1999
Quantifying Surface Roughness Effects on Phonon Transport in Silicon Nanowires journal April 2012
Thermal conductivity of silicon nanowire arrays with controlled roughness journal December 2012
Reduction of thermal conductivity in phononic nanomesh structures journal July 2010

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